258 resultados para J.P. Morgan


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InxGa1-xAs/InP (0.39 less than or equal to x less than or equal to 0.68) strained-layer quantum wells having 20 wells with thickness of 50 Angstrom in a P-i-N configuration were grown by gas source molecular beam epitaxy (GSMBE). High-resolution X-ray diffraction rocking curves show the presence of up to seven orders of sharp and intense satellite reflection, indicative of the structural perfection of the samples. Low-temperature photoluminescence and low-temperature absorption spectra were used to determine the exciton transition energies as a function of strain. Good agreement is achieved between exciton transition energies obtained experimentally at low temperature with those calculated using the deformation potential theory.

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GaNp-i-n(p-AlGaN/i-GaN,n-GaN).,,V.SEM,Vi-GaNn-GaN.p-AlGaN,V,i-GaN.n-GaN..

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p(p~--GaN)p-nGaN.p,,.,p~--GaNp~--GaN.,p~--GaNp~--GaN,.p-n,p~--GaN,p~--GaN.

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p-GaNNi/Au,HClHF,O_2,I-V.,.(AES),NiOp-GaN,Ni.10%,I-V;X(XPS)Ni,Au,PNiO,.

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The Ni/Au contact was treated with oxalic acid after annealing in O_2 ambient, and its I-V characteristic showed the property of contact has been obviously improved. An Auger electron spectroscopy (AES) depth pro-file of the contact as-annealed showed that the top layer was highly resistive NiO, while an X-ray photo-electron spectroscopy (XPS) of oxalic acid treated samples indicated that the NiO has been removed effectively. A scanning electron microscope (SEM) was used to observe the surface morphology of the contacts, and it was found that the lacunaris surface right after annealing became quite smooth with lots of small Au exposed areas after oxalic acid treatment. When the test probe or the subsequently deposited Ti/Au was directly in contact with these small Au areas, they worked as low resistive current paths and thus decrease the specific contact resistance.

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p1.3 m InAs/GaAs.,,17.5 cm~(-1),.,pInAs/GaAs,.,p1.3 m InAs/GaAs.

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p-GaN+,AgAlNi/Au,PtAu,Ag,AgAg,Al,,460nm74%Ag

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p-GaNGaNpin.:p-GaN,,p-GaN,.,p-GaN.,p.

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n-GaAsp-GaN.,.,.-,n-GaAs/p-GaN1.08.n-GaAsp-GaNGaAsGaN.

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(NH_4)_2Sp-GaN,OlsX(XPS),p-GaN;,Ni/Au,p-GaN,,,Ni/Au,(NH_4)_2Sp-GaN,Ni/Au;,Ga/N,p-GaN.

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PECVDSiO_2SiNxHMg~-p-GaNN_v~+SiO_2SiN_xHHNiAup-GaNp-GaNMg-HNiAuI-V15W1356MHzSiO_2p-GaN

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(PEVVD)p(p-nc-SiC:H),,,333 K,353 K373 K.,;,(0.06 eV).RamanXRD.pp-i-n,0.94 V.