DEFECTS INDUCED BY P+-IMPLANTED IN SILICON

Autoria(s): YONG Y; QI L; DUAN F; DA WP; LING SH
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14447

http://www.irgrid.ac.cn/handle/1471x/101258
Idioma(s)

英语
Fonte

YONG Y; QI L; DUAN F; DA WP; LING SH.DEFECTS INDUCED BY P+-IMPLANTED IN SILICON,JOURNAL OF MATERIALS SCIENCE,1989,24(12):4225-4228
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital