Raman scattering study of vibrational modes and hole concentration in GaxMn1-xSb

The Raman scattering study of vibrational modes and hole concentration in a ferromagnetic semiconductor Ga1-xMnxSb grown by Mn ion implantation, deposition and post-annealing has been presented. The experiments are performed both in implanted and unimplanted regions before and after etching the samples. The Raman spectra measured from the unimplanted region show only GaSb-like phonon modes. On the other hand, the spectra measured from the implanted region show additional phonon modes approximately at 115, 152, 269, 437 and 659 cm(-1). The experimental results demonstrate that the extra modes are associated with surface defects, crystal disorder and blackish layer that is formed due to Mn ion implantation, deposition and annealing processes. Furthermore, we have determined the hole concentration as a function of laser probing position by modeling the Raman spectra using coupled mode theory. The contributions of GaSb-like phonon modes and coupled LO-phonon plasmon mode are taken into consideration in the model. The hole-concentration-dependent CLOPM is resolved in the spectra measured from the implanted and nearby implanted regions. The hole concentrations determined by Raman scattering are found to be in good agreement with those measured by the electrochemical capacitance-voltage technique.

Post-WIMP环境下笔式交互范式的研究

提出了一种在Post-WIMP环境下的笔式交互范式:PIBG.PIBG范式采用纸笔隐喻,与WIMP范式相比,承载应用信息的交互组件由Window变为Paper和Frame,用户的交互动作由鼠标的点击变为笔的手势.对PIBG范式中静态的界面形式和动态的交互手势进行了研究和设计.结合认知心理学,从信息呈现和交互方式两个方面对该范式的特点进行了阐述.利用GOMS模型,从界面呈现方式、手势的效率、用户满意度三个方面对该范式进行了心理学评估.从评估结果可以看,PIBG范式通过模拟日常纸笔环境,利用用户原有的知识,可以明显地减轻认知负担,提高操作效率.

Post-WIMP界面隐式交互特征研究

首先从认知心理学的角度对Post—WIMP界面下的隐式交互特征进行分析和描述。然后通过对传统界面的交互任务生成结构和Post—WIMP界面的交互任务生成结构进行比较,分析Post—WIMP界面交互任务的生成特点。根据这些特点提出了利用识别技术、上下文感知技术和用户修正技术(User Mediation)相结合的方法来支持Post—WIMP界面的隐式交互，并构造了Post—WIMP界面的交互任务生成框架。这些隐式交互特征的研究将为建立Post—WIMP界面软件框架和交互平台提供底层支持。

基于混合自动机的Post-WIMP界面的建模

Post- WIMP界面作为继当前的主流界面范式—— WIMP界面后的下一代界面范式 ,它和 WIMP界面有着很大的不同 ,通过使用虚拟现实、语音交互、手势交互等技术 ,它能够提供更加自然高效的交互方式 .然而 ,它却难以构造 .为了有效地构造 Post- WIMP界面 ,在构造之前不考虑实现细节 ,而在一个抽象的层次上描述它是一个较好的方法 .首先 ,分析了 Post- WIMP界面的交互本质 ,交互混合性是 Post- WIMP界面一个最为重要的特点 .从形式化系统的角度分析 Post- WIMP界面 ,通过将 Post- WIMP界面抽象为混合系统能够更为准确和严格地分析Post- WIMP界面的特性 .混合自动机是用于描述混合系统的形式化工具 ,将 Post- WIMP界面建模为一组相互协作的混合自动机 .设计了一基于混合自动机理论的半形式化语言 L EAFF作为 Post- WIMP界面的描述工具 .LEAFF通过结合文本描述和图形描述描述 Post- WIMP界面中的交互行为 ,能够准确地反映交互中的控制关系、时序关系 .给出了对两个典型 Post- WIMP界面——虚拟现实交互和笔式交互的描述实例 ,同时讨论了 Post- WIMP界面中交互并行性的描述、交互实时性的验证和从描述到实际交互系统构造的转换 .

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL

The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES

GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers.

Photoluminescence and activation on SI-GaAs by Si+ implantation and following rapid thermal annealing

Photoluminescence (PL) and electrical characteristics of SI-GaAs, Si+-implanted and following rapid thermal annealing (RTA), were investigated, The PL spectra of Si-GA-C-As, Ga-i-Si-As, and V-As-Si-As were obtained. This paper concentrates on the PL peak at 1.36 eV which was proven as an emission of the Si-Ga-V-Ga combination by Si+ + P+ dual implantation. The results indicate that the peak at 1.36 eV appears when the ratio of As:Ga increased during the processing. Also high activation was obtained for the sample under the same conditions. More discussion on the mechanism of Si+ implanted SI-GaAs has been made based on the Morrow model [J. Appl. Phys, 64 (1988) 1889].