REGROWTH OF MBE-GAAS FILMS ON SI SUBSTRATES BY HIGH-ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING
| Data(s) |
1989
|
|---|---|
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
XIAO GM; YIN SD; ZHANG JP; FAN TW; LIU JR; DING AJ; ZHOU JM; ZHU PR.REGROWTH OF MBE-GAAS FILMS ON SI SUBSTRATES BY HIGH-ENERGY ION-IMPLANTATION AND SUBSEQUENT ANNEALING,CHINESE PHYSICS LETTERS,1989,6(10):451-454 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
