RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE


Autoria(s): XU TB; ZHU PR; ZHOU JS; LI DQ; GONG B; WAN Y; MU SM; ZHAO QT; WANG ZL
Data(s)

1994

Resumo

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

Identificador

http://ir.semi.ac.cn/handle/172111/14003

http://www.irgrid.ac.cn/handle/1471x/101036

Idioma(s)

英语

Fonte

XU TB; ZHU PR; ZHOU JS; LI DQ; GONG B; WAN Y; MU SM; ZHAO QT; WANG ZL.RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,1994,90(0):392-395

Palavras-Chave #半导体物理 #ION-IMPLANTATION #AMORPHIZATION
Tipo

期刊论文