NOVEL SEMICONDUCTOR SUBSTRATE FORMED BY HYDROGEN-ION IMPLANTATION INTO SILICON

Autoria(s): LI JM
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14441

http://www.irgrid.ac.cn/handle/1471x/101255
Idioma(s)

英语
Fonte

LI JM.NOVEL SEMICONDUCTOR SUBSTRATE FORMED BY HYDROGEN-ION IMPLANTATION INTO SILICON,CHINESE PHYSICS LETTERS,1989,6(10):458-460
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital