PROPERTIES OF SOI STRUCTURES FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON

Autoria(s): LU DT; LU WX; WANG ZL; DU YC; ZHENG HD; MO D; LIANG ZN
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14501

http://www.irgrid.ac.cn/handle/1471x/101285
Idioma(s)

英语
Fonte

LU DT; LU WX; WANG ZL; DU YC; ZHENG HD; MO D; LIANG ZN.PROPERTIES OF SOI STRUCTURES FORMED BY HIGH-DOSE OXYGEN IMPLANTATION INTO SILICON,VACUUM ,1989,39(0):219-221
Palavras-Chave #半导体材料
Tipo

期刊论文
Acesso ao item digital