INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL
Data(s) |
1993
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Resumo |
The composition and microstructure of buried layers of AlN formed by high energy N+ ion implantation into polycrystalline Al have been determined. Both bulk and evaporated thin films of Al have been implanted with 100 and 200 keV N+ ions to doses of up to 1.8 x 10(18)/cm2. The layers have been characterised using SIMS, XTEM, X-ray diffraction, FTIR, RBS and in terms of their microhardness. It is found that, for doses greater than the critical dose, buried, polycrystalline AlN layers are formed with preferred (100) or (002) orientations, which are sample specific. With increasing dose the nitrogen concentration saturates at the value for stoichiometric AlN although the synthesised compound is found to be rich in oxygen. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
LIN C; LI Y; KILNER JA; CHATER RJ; LI J; NEJIM A; ZHANG JP; HEMMENT PLF.INVESTIGATION OF BURIED ALN LAYERS FORMED BY NITROGEN IMPLANTATION INTO AL,NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS ,1993,80-81(0):323-326 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |