IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES
Data(s) |
1991
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Resumo |
GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2. A rapid infrared thermal annealing and white light annealing were then used for recrystallization. Crystalline quality was analysed by using backscattering channeling technique with Li ion beam of 4.2 MeV. The experimental results show that energy selection is important for obtaining better and uniform recrystallized GaAs epilayers. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
XIAO GM; YIN SD; ZHANG JP; DING AJ; DONG AH; ZHU PR; ZHOU JM.IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES,CHINESE PHYSICS LETTERS,1991,8(3):149-152 |
Palavras-Chave | #半导体物理 #QUALITY |
Tipo |
期刊论文 |