A STUDY OF ION-IMPLANTATION-RESISTANT ETCHING TECHNIQUE

Autoria(s): HAN JP; WANG PD; MA JR; WANG SW
Data(s)

1987
Identificador

http://ir.semi.ac.cn/handle/172111/14643

http://www.irgrid.ac.cn/handle/1471x/101356
Idioma(s)

英语
Fonte

HAN JP; WANG PD; MA JR; WANG SW.A STUDY OF ION-IMPLANTATION-RESISTANT ETCHING TECHNIQUE,CHINESE PHYSICS ,1987,7(2):570-574
Palavras-Chave #半导体物理
Tipo

期刊论文
Acesso ao item digital