SiC纳米棒光学声子的喇曼光谱

报道了用光谱的手段研究SiC纳米棒(NR)的结果。对于在实验中观察到LO模的大幅度红移及新出现的喇曼峰，认为在类似SiC NR的存在大量缺陷的极性纳米材料中，结构缺陷对材料特性的影响比量子限制效应更为重要。理论计算证实了这一点，并解释了实验观察到的异常现象。

6H-SiC高反压台面pn结二极管

在可商业获得的单晶6H-SiC晶片上，通过化学气相淀积，进行同质外延生长；并在此6H-SiC结构材料上，利用反应离子刻蚀和接触合金化技术，制作台面pn结二极管。详细测量并分析了器件的电学特性，测量结果表明此6H-SiC二极管在室温、空气介质中，-10V时，漏电流密度为2.4×10~(-8)A/cm~2，在反向电压低于600V及接近300℃高温下都具有良好的整流特性。

使用 X射线衍射技术判定 Si C单晶体的结构和极性（英文）

使用四圆衍射仪和双晶衍射技术，分析了SiC体单晶的结构和极性。SiC单晶体由化学气相淀积法获得。六方{10-15}极图证明了该单晶结构为6H型。三轴晶衍射中的ω模式衍射强度的差异判定了该单晶的Si终端面和C终端面，即极性面。两个面的一、二、三级衍射强度的测量比值与经过散射因子修正后计算的结构振幅平方比值｜F(000L)｜~2/｜F(000-L)｜~2非常吻合。因此，利用极性面的衍射强度差异，可以方便、严格地判断具有类似结构如2H{0001}、4H{0001}及3C-SiC{111}的极性。

Strain Analysis of Cubic AlGaN/GaNGrownon GaAs（100） Substrate by MOVPE

于2010-11-23批量导入

半导体SiC材料的外延生长

SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点, 在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。本文简要介绍SiC半导体材料的液相外延、化学气相和分子束外延生长的概况及生长过程中杂质的控制。

SiC单晶的生长及其器件研制进展

SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等物点。在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。该文综述了半导体SiC单晶和薄膜的生长及其器件研制的概况。

Study on photoluminescence spectra of SiC

于2010-11-23批量导入

Growth of GaN on magnesium aluminate substrate by LP-MOVPE

于2010-11-23批量导入

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

The SPER and characteristics of Si1-yCy alloys

\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate.

Influence of heated catalyzer on thermal distribution of substrate in HWCVD system

Based on Stefan-Boltzman and Lambert theorems, the radiation energy distribution on substrate (REDS) from catalyzer with parallel filament geometry has been simulated by variation of filament and system layout in hot-wire chemical vapor deposition. The REDS uniformity is sensitive to the distance between filament and substrate d(f-s) when d(f-s) less than or equal to 4 cm. As d(f-s) > 4 cm, the REDS uniformity is independent of d(f-s) and is mainly determined by filament number and filament separation. Two-dimensional calculation shows that the REDS uniformity is limited by temperature decay at filament edges. The simulation data are in good agreement with experiments. (C) 2003 Elsevier Science B.V. All rights reserved.

Design of high brightness cubic-GaN LEDs grown on GaAs substrate

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.