Growth of GaN on magnesium aluminate substrate by LP-MOVPE
| Data(s) |
1997
|
|---|---|
| Resumo |
于2010-11-23批量导入 zhangdi于2010-11-23 13:12:58导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-23T05:12:58Z (GMT). No. of bitstreams: 1 5837.pdf: 172781 bytes, checksum: 7cb16514c245d166d231afc5bed91b59 (MD5) Previous issue date: 1997 中科院半导体所;中科院安徽光学精密机械所 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
段树坤;滕学会;李国华;王玉田;杭寅.Growth of GaN on magnesium aluminate substrate by LP-MOVPE,半导体学报,1997,18(10):787 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
