The SPER and characteristics of Si1-yCy alloys
Data(s) |
1998
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Resumo |
\Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate. \Si1-yCy alloys with carbon composition of 0.5 at.% were successfully grown on n-Si(100) substrate by solid phase epitaxy recraystallization. The result was presented in this paper. With the help of the SiO2 capping layer, rather uniform carbon profile in amorphous Si layer was obtained by dual-energy implantation. Since ion-flow was small and implantation time was long enough, the emergency of beta-SiC was avoided and the dynamic annealing effect was depressed. The pre-amorphization of the Si substrate increased the fraction of the substitutions carbon and the two-step annealing reduced point defects. As a result, Si1-yCy alloys with high quality was recrystallized on Si substrate. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:18Z (GMT). No. of bitstreams: 1 3032.pdf: 216196 bytes, checksum: c6eef61184852e4fcce79eee3f1653da (MD5) Previous issue date: 1998 SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
Fonte |
Yu Z; Yu JZ; Cheng BW; Lei ZL; Li DZ; Wang QM; Liang JW .The SPER and characteristics of Si1-yCy alloys .见:SPIE-INT SOC OPTICAL ENGINEERING .INTEGRATED OPTOELECTRONICS II, 3551,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,18-22 |
Palavras-Chave | #光电子学 #Si1-yCy alloys #ion implantation #solid phase epitaxy recrystallization |
Tipo |
会议论文 |