Design of high brightness cubic-GaN LEDs grown on GaAs substrate


Autoria(s): Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H
Data(s)

2003

Resumo

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

The Principle of optical thin film was used to calculate the feasibility of improving the light extraction efficiency of GaN/GaAs optical devices by wafer-bonding technique. The calculated results show that the light extraction efficiency of bonded samples can be improved by 2.66 times than the as-grown GaN/GaAs samples when a thin Ni layer was used as adhesive layer and Ag layer as reflective layer. Full reflectance spectrum comparison shows that reflectivity for the incident light of 459.2 nm of the bonded samples was improved by 2.4 times than the as-grown samples, which is consistent with the calculated results.

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AIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.

Chinese Acad Sci, State Key Lab Integrated Optoelect, Inst Semicond, Beijing 100083, Peoples R China

AIXTRON AG.; Epichem Inc.; KODENSHI AUK.; LG Electr Inst Technol.; LUXPIA Co Ltd.; Natl Program Tera Level Nanodevices.; Thomas Swan Sci Equipment Ltd.; Kyung Hee Univ, Adv Display Res Ctr.; Sungkyunkwan Univ, Ctr Nanotubes & Nanostruct Composites.; Dongguk Univ, Quantum Funct Semiconductor Res Ctr.; Chonbuk Natl Univ, Semiconductor Phys Res Ctr.

Identificador

http://ir.semi.ac.cn/handle/172111/14859

http://www.irgrid.ac.cn/handle/1471x/105147

Idioma(s)

英语

Publicador

KOREAN PHYSICAL SOC

635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA

Fonte

Sun YP; Shen XM; Zhang ZH; Zhao DG; Feng ZH; Fu Y; Zhang SN; Yang H .Design of high brightness cubic-GaN LEDs grown on GaAs substrate .见:KOREAN PHYSICAL SOC .JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 42,635-4, YUKSAM-DONG, KANGNAM-KU, SEOUL 135-703, SOUTH KOREA ,2003,S753-S756

Palavras-Chave #光电子学 #wafer bunding #cubic GaN #LIGHT-EMITTING-DIODES #FIELD-EFFECT TRANSISTOR #SINGLE-CRYSTAL GAN #MICROWAVE PERFORMANCE #MIRROR #JUNCTION
Tipo

会议论文