The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

Wurtzite single crystal GaN films have been grown onto a gamma-Al2O3/Si(001) substrate in a horizontal-type low pressure MOVPE system. A thin gamma-Al2O3 layer is an intermediate layer for the growth of single crystal GaN on Si although it is only an oriented polycrystal film as shown by reflection high electron diffraction. Moreover, the oxide is not yet converted to a fully single crystal film, even at the stage of high temperature for the GaN layer as studied by transmission electron microscopy. Double crystal x-ray linewidth of (0002) peak of the 1.3 mu m sample is 54 arcmin and the films have heavy mosaic structures. A near band edge peaking at 3.4 eV at room temperature is observed by photoluminescence spectroscopy. Raman scattering does not detect any cubic phase coexistence.

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Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.