Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

于2010-10-29批量导入

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Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.

Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.