Si（001）衬底上APCVD生长3C-SiC薄膜的微孪晶及含量

于2010-11-23批量导入

a-SiCx∶H和β-SiC中Er缺陷结构及其1.54μm发光探索

材料科学开放实验室基金,光学信息技术科学教育部开放实验室基金

Si（001）衬底上方形3C-SiC岛的LPCVD生长

于2010-11-23批量导入

6H-SiC高压肖特基势垒二极管

在可商业获得的N型6H-SiC晶片上，通过化学气相淀积，进行同质外延生长，在此结构材料上，通过热蒸发，制作Ni/6H-SiC肖特基势垒二极管。测量并分析了肖特基二极管的电学特性，结果表明，肖特基二极管具有较好的整流特性

高压 Ti/ 6H- SiC肖特基势垒二极管（英文）

在N型6H-SiC外延片上，通过热蒸发，制作Ti/6H-SiC肖特基势垒二极管(SBD)。通过化学气相淀积，进行同质外延生长，详细测量并分析了肖特基二极管的电学特性，该肖特基二极管具有较好的整流特性。反向击穿电压约为400V，室温下，反向电压V_R=200V时，反向漏电流J_R低于1×10~(-4)A/cm~2。采用Ne离子注入形成非晶层，作为边缘终端，二极管的击穿电压增加到约为800V。

SiC纳米棒光学声子的喇曼光谱

报道了用光谱的手段研究SiC纳米棒(NR)的结果。对于在实验中观察到LO模的大幅度红移及新出现的喇曼峰，认为在类似SiC NR的存在大量缺陷的极性纳米材料中，结构缺陷对材料特性的影响比量子限制效应更为重要。理论计算证实了这一点，并解释了实验观察到的异常现象。

6H-SiC高反压台面pn结二极管

在可商业获得的单晶6H-SiC晶片上，通过化学气相淀积，进行同质外延生长；并在此6H-SiC结构材料上，利用反应离子刻蚀和接触合金化技术，制作台面pn结二极管。详细测量并分析了器件的电学特性，测量结果表明此6H-SiC二极管在室温、空气介质中，-10V时，漏电流密度为2.4×10~(-8)A/cm~2，在反向电压低于600V及接近300℃高温下都具有良好的整流特性。

半导体SiC材料的外延生长

SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等特点, 在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。本文简要介绍SiC半导体材料的液相外延、化学气相和分子束外延生长的概况及生长过程中杂质的控制。

SiC单晶的生长及其器件研制进展

SiC具有禁带宽度大、热导率高、电子的饱和漂移速度大、临界击穿电场高和介电常数低等物点。在高频、大功率、耐高温、抗辐照的半导体器件及紫外探测器和短波发光二极管等方面具有广泛的应用前景。该文综述了半导体SiC单晶和薄膜的生长及其器件研制的概况。

Study on photoluminescence spectra of SiC

于2010-11-23批量导入

Growth of GaN on magnesium aluminate substrate by LP-MOVPE

于2010-11-23批量导入

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

Modulation magnesium-doping in AlGaN/GaN superlattices

Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.

Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.