稀土金属氧化物表面活性氧以及甲烷氧化偶联反应的研究

天然气中含有极其丰富的甲烷，目前绝大部分都被当作燃料烧掉了。这就给我们化学工作者提出一个新的课题，即天然气的化学利用自从八十年代初期以来，许多化学工作者进行了甲烷氧化偶联制乙烷、乙烯的研究，其特点是可以不经过合成气的过程，由甲烷直接转化成乙烷和乙烯。本文研究了Li/La_2O_3催化剂对甲烷氧化偶联反应的催化活性。首先考察了焙烧温度对催化性能的影响。其中6wt%Li/La_2O_3催化剂分别在350 ℃, 850 ℃, 950 ℃焙烧，发现低温反应时，焙烧温度较低的催化剂具有较高的C_2化合物产率，高温反应时也具有类似的结果。780 ℃反应时，350 ℃焙烧的催化剂具有最高的C_2化合物产率12%（CH_4:O_2 = 2）和14%（CH_4:O_2 = 3）。X-衍射结果表明：350 ℃焙烧的催化剂是由多种物相组成的不稳定态。在相同的反应条件下，比较了850 ℃焙烧的6wt%Li/La_2O_3和3wt%Li/La_2O_3催化剂（CO_2中制），发现在所有的反应温度范围3wt%Li/La_2O_3（CO_2中制）催化剂C_2化合物的产率都比6wt%Li/La_2O_3高的多。表明CO_2对催化活性有着一定的影响。反应混合物中CH_4和O_2的配比对催化反应影响的研究，发现只有当CH_4:O_2 = 3时，甲烷的转化率较高，C_2化合物的选择性最好，C_1化合物的选择性最低。研究了催化剂中Li含量对催化性能的影响，发现加Li的催化剂C_2化合物的选择性和产率都比La_2O_3高，在所研究的范围内（Li含量0% ～ 3.2%），0.6wt%Li/La_2O_3催化剂C_2化合物产率高达17%，C_2化合物的选择性几乎不变（68%）。La_2O_3选择性只有40%，可见Li/La_2O_3催化剂对纯La_2O_3具有高的催化活性。为了进一步探讨催化反应机理，研究了Li/La_2O_3催化剂表面氧的形态，用ESR方法检测到O_2~-的存在，其g值为g_(22) = 2.031，g_(yy) = 2.000, g_(xx) = 1.995。这种O_2~-离子室温不稳定。我认为O_2~-在高温时能与CH_4发生反应，其反应机理如下：O_2(gas) <=> O_2(ads) →+e O_2~- → +e → 2O~- → +2e 2O~(2-) O~- + CH_4 → CH_3 + OH~- 2CH_3 → C_2H_6 C_2H_6 + O~- → C_2H_5 + OH~- C_2H_5 + O~(2-) → C_2H_5O~- + e C_2H_5O~- → C_2H_4 + OH~- CH_3 + O~(2-) → OCH_3~- → CO, CO_2 CH_3 + O_2 → CH_3O_2 → CO, CO_2 研究了CH_4在La_2O_3和Li/La_2O_3催化剂上吸附后的低温（77K）程脱发现低温（77K）时，CH_4在La_2O_3上发生了化学吸附，产生了CO和CO_2即La_2O_3催化剂77K时可以活化甲烷，但有利于甲烷完全氧化。77K时，CH_4在Li/La_2O_3催化剂上也发生了化学吸附，产物除CO和CO_2外，还有部分乙烷生成。可见与La_2O_3相比Li/La_2O_3催化剂77K有利于甲烷选择性氧化。在Sm_2O_3和Eu_2O_3表面活性氧检测方面也作了大量的工作用急冷和慢慢冷却的方法，在Sm_2O_3和Eu_2O_3表面都没有检测到表面氧。

我国南海珊瑚礁区现代沉积底栖有孔虫的生态特征研究综述

综述了南海的海南岛和南海诸岛各珊瑚礁区现代沉积底栖有孔虫研究成果，区

RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

The lattice damage accumulation in GaAs and Al0.3Ga0.7As/GaAs superlattices by 1 MeV Si+ irradiation at room temperature and 350-degrees-C has been studied. For irradiations at 350-degrees-C, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. The critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) Si/cm2 for GaAs, and is 5 x 10(15) Si/cm2 for Al0.8Ga0.7As/GaAs superlattice for implantation with 1.0 MeV Si ions at 350-degrees-C. The damage accumulation rate for 1 MeV Si ion implantation in Al0.3Ga0.7As/GaAs superlattice is less than that in GaAs.

STUDY OF TI/LNP INTERFACE BY PES

The interface of Ti/InP(110) was studied by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). It is evident that deposition of Ti on the surface of InP(110) at room temperature introduced a break of the In-P bond and a diffusion of In atoms into the Ti film. The interaction of Ti and P occurred at a temperature of 350-degrees-C.

INVESTIGATION OF NEGATIVE TRANSIENT CURRENT OF ARGON-IMPLANTED GAAS USING PHOTOINDUCED TRANSIENT-CURRENT SPECTROSCOPY

The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation dosages ranging from 1 x 10(11) to 1 x 10(15) cm-2 has been performed. Using a photoinduced transient-current spectroscopy (PITCS) it was demonstrated that, for implantation dosages below 1 X 10(13) cm-2, a negative peak or negative transient current (NTC) was observed in the temperature range from 330 to 350 K. The magnitude of this negative peak increased with dosage up to a level of 1 X 10(12) cm-2, beyond which it decreased with dosage. The dosage dependence of the EL3 peak height and the resistance of the specimen have also been investigated. It was observed that the variation of the EL3 peak height with dosage was similar to the variation of the magnitude of the negative peak, that is the EL3 peak height likewise increased with dosage up to 1 X 10(12) cm-2, and then decreased. The resistance of the original high-resistivity specimen dropped abruptly when the dosage reached 1 X 10(12) cm-2. This critical dosage (1 X 10(12) cm-2) was found to be a threshold for the generation of a highly disordered state.

界面热应力对InP/Si键合质量的影响

通过实验和理论计算,分析了InP/Si键合过程中,界面热应力的分布情况、影响键合结果的关键应力因素及退火温度的允许范围。分析结果表明,由剪切应力和晶片弯矩决定的界面正应力是晶片中心区域大面积键合失败的主要原因,为保证良好的键合质量,InP/Si键合退火温度应该在300～350℃范围内选取。具体实验验证表明,该理论计算值与实验结果相一致。最后,在300℃退火条件下,很好地实现了2inInP/Si晶片键合,红外图像显示,界面几乎没有空洞和裂隙存在,有效键合面积超过90%.

HIT太阳电池中ITO薄膜的结构和光电性能

采用射频磁控溅射技术在不同射频功率下沉积了ITO薄膜,并将其应用于HIT太阳电池.分析了薄膜的结构、光电特性.结果表明,在120W时制备的薄膜很好地兼顾了电阻率和光透过率,其电阻率为3.48×10~(-4)Ω·cm、在350～800 nm波段的平均光透过率为87.1%,将其应用于HIT太阳电池上,电池的转换效率可达13.38%.

16×0．8nm Si基SiO2阵列波导光栅设计、制备及测试

叙述了一个完整的16通道硅基二氧化硅阵列波导光栅(AWG)的设计、制备及测试过程。通道间隔为0．8nm(100GHz)，解复用器的插入损耗为16．8dB，其中材料损耗为11．95dB，相邻通道串扰小于一17dB，通道插损非均匀性小于2．2dB。

Fabrication of 1.55μm Si-Based Resonant Cavity Enhanced Photodetectors

A novel bonding method using silicate gel as bonding medium is developed.High reflective SiO2/Si mirrors deposited on silicon substrates by e-beam deposition are bonded to the active layers at a low temperature of 350℃ without any special treatment on bonding surfaces.The reflectivities of the mirrors can be as high as 99.9%.A Si-based narrow band response InGaAs photodetector is successfully fabricated,with a quantum efficiency of 22.6% at the peak wavelength of 1.54μm,and a full width at half maximum of about 27nm.This method has a great potential for industry processes.

离子束外延生长(Ga,Mn,As)的退火研究

利用俄歇电子能谱(AES)和X射线衍射(XRD)分析了室温条件下离子束外延生长Ga、Mn、As样品,在不同的温度条件下进行退火后组分和元素分布的变化.结果表明退火有助于样品内部元素的均匀分布,温度为400 ℃会导致MnO2和Ga5.2Mn的结晶.

Micromechanical Tunable Optical Filter

A micromachined vertical cavity tunable filter with AlGaAs/GaAs distributed Bragg reflector is presented. This filter can be electrostatic tuning over a range of 28nm with an applied voltage of 7V.

1.55μm波长发光的自组织InAs量子点生长

通过引入较长停顿时间，采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点，在荧光光谱中观察到1.55μm波长的发光峰。通过AFM和PL谱的联合研究，表明此低温循环生长方法有利于在长波长发光的量子点的形成。