XPS depth profiling study of n/TCO interfaces for p-i-n amorphous silicon solar cells

Detailed X-ray photoelectron spectroscopy (XPS) depth profiling measurements were performed across the back n-layer/transparent conducting oxide (n/TCO) inter-faces for superstrate p-i-n solar cells to examine differences between amorphous silicon (a-Si:H) and microcrystalline silicon (mu c-Si:H) n-layer materials as well as TCO materials ZnO and ITO in the chemical, microstructural and diffusion properties of the back interfaces. No chemical reduction of TCO was found for all variations of n-layer/TCO interfaces. We found that n-a-Si:H interfaces better with ITO, while n-mu c-Si:H, with ZnO. A cross-comparison shows that the n-a-Si:H/ITO interface is superior to the n-mu c-Si:H/ZnO interface, as evidenced by the absence of oxygen segregation and less oxidized Si atoms observed near the interface together with much less diffusion of TCO into the n-layer. The results suggest that the n/TCO interface properties are correlated with the characteristics of both the n-layer and the TCO layer. Combined with the results reported on the device performance using similar back n/TCO contacts, we found the overall device performance may depend on both interface and bulk effects related to the back n/TCO contacts. (c) 2006 Elsevier B.V. All rights reserved.

Identification of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

An anomalous behavior was observed in X-ray photoelectron Spectroscopy (XPS) depth profile measurements conducted on CeO2/Si epilayers grown by ion beam epitaxy (IBE): the signals of Ce3+ and Ce4+ co-exist, and the ratio between them increases during the etching time and then tends to maintain a constant level before increasing again. The results of X-ray Diffraction (XRD), Auger Electron Spectroscopy (AES), and Rutherford Back-Scattering (RES) measurements proved that the reduction chemical reaction of CeO2 is induced by ion-etching. (C) 1998 Elsevier Science Ltd. All rights reserved.

Mechanism of induced reaction during XPS depth profile measurements of CeO2/Si films grown by ion beam epitaxy

In a search for the mechanism of the induced reduction reaction that occurred in X-ray photoelectron Spectroscopy (XPS) depth profiles measured experimentally on CeO2/Si epilayers grown by ion beam epitaxy (IBE), several possibilities have been checked. The first possibility, that the X-ray induces the reaction, has been ruled out by experimentation. Other possible models for the incident-ion induced reaction, one based on short-range interaction (direct collision) and the other based on long-range potential accompanied with the incident-ions, have been tested by simulation on computer. The results proved that the main mechanism is the former, not the latter. (C) 1998 Elsevier Science Ltd. All rights reserved.

INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

磁性半导体Gd_xSi_(1-x)的XPS研究

采用离子束技术,在n型硅基片上注入稀土元素钆,制备了磁性/非磁性p-n结.本文中使用的XPS对制备的样品进行测试,利用Origin 7.0提供的PFM工具进行研究,O1s束缚能介于金属氧化物和SiO_2中O1s的束缚能之间,Si2p的XPS谱分裂为两个峰,其中一个是单质Si的,另一个介于单质Si和硅化物之间,Gd4d的束缚能介于金属钆和氧化钆中的Gd4d之间,说明Gd_xSi_(1-x)形成了无定形结构.

非晶氮化硅薄膜退火前后微结构的XPS研究

于2010-11-23批量导入

气相和溶液多硫化物钝化InP表面的XPS和AFM研究

国家自然科学基金

氧离子束辅助激光淀积生长ZnO/Si的XPS研究

利用X射线光电子能谱深度剖析方法对ZnO/Si异质结构进行了分析。用该法可生长出正化学比的ZnO，不过生长的ZnO薄膜存在孔隙，工艺还有待进一步改进。

Ni?莫来石界面反应的XPS研究

国家自然科学基金

GS-MBE生长的GaP/Si的XPS研究

利用X射线光电子能谱(XPS)深度剖析方法对气体源分子束外延(GS-MBE)生长的GaP/Si异质结构进行了详细的分析。其结果表明

在Si（111）上外延生长硅化钴薄膜的SEM和XPS研究

于2010-11-23批量导入

Phase Behavior and dewetting for polymer blend films studied by in situ AFM and XPS: From thin to ultrathin films

In this work, the film thickness (l(0)) effect on the phase and dewetting behaviors of the blend film of poly(methyl methacrylate)/poly (styrene-ran-acrylonitrile) (PMMA/SAN) has been studied by in situ atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The thinner film shows the more compatibility of the blend, and the phase separation of the film occurs at l(0) > 5R(g) (radius of gyration). An initially time-independent q*, the characteristic wavenumber of the phase image, which is in good agreement of Cahn's linearized theory for the early stage of spinodal decomposition, has been obtained in real space and discussed in detail. For 5R(g) > l(0) > 3R(g), a "pseudo-dewetting/(phase separation + wetting)" behavior occurs, where the pseudo-wetting is driven by the concentration fluctuation mechanism. For 10 < 3R(g), a "real dewetting/(phase separation + wetting)" behavior occurs.