An Investigation into the Optimum Thickness of Titanium Dioxide Thin Films Synthesized by Using Atmospheric Pressure Chemical Vapour Deposition for Use in Photocatalytic Water Oxidation

Twenty eight films of titanium dioxide of varying thickness were synthesised by using atmospheric pressure chemical vapour deposition (CVD) of titanium(IV) chloride and ethyl acetate onto glass and titanium substrates. Fixed reaction conditions at a substrate temperature of 660 degrees C were used for all depositions, with varying deposition times of 5-60 seconds used to control the thickness of the samples. A sacrificial electron acceptor system composed of alkaline sodium persulfate was used to determine the rate at which these films could photo-oxidise water in the presence of 365 nm light. The results of this work showed that the optimum thickness for CVD films on titanium substrates for the purposes of water oxidation was approximate to 200 nm, and that a platinum coating on the reverse of such samples leads to a five-fold increase in the observed rate of water oxidation.

Atmospheric Pressure Chemical Vapour Deposition of thin Films of Nb2O5 on Glass

A novel route involving atmospheric pressure chemical vapour deposition (APCVD) is reported for coating Nb2O5 onto glass substrates via the reaction of NbCl5 and ethyl acetate at 400-660degreesC. Raman spectroscopy is shown to be a simple diagnostic tool for the analysis of these thin films. The contact angle of water on Nb2O5-coated glass drops on UV irradiation from 60degrees to 5-20degrees. XPS Analysis showed that the Nb:O ratio of the film was 1:2.5. Glancing angle X-ray diffraction showed that all films were crystalline, with only a single phase being observed; this has some preferred orientation in the (201) plane of Nb2O5. The niobium(V) oxide materials show minimal photocatalytic ability to degrade organic material.

Anatase thin films on glass from the chemical vapor deposition of titanium(IV) chloride and ethyl acetate

Thin (50-500 nm) films of TiO2 may be deposited on glass substrates by the atmospheric pressure chemical vapor deposition (APCVD) reaction of TiCl4 with ethyl acetate at 400600 C. The TiO2 films are exclusively in the form of anatase, as established by Raman microscopy and glancing angle X-ray diffraction. X-ray photoelectron spectroscopy gave a 1:2 Ti:O ratio with Ti 2P(3/2) at 458.6 eV and O 1s is at 530.6 eV. The water droplet contact angle drops from 60degrees to

Atmospheric pressure chemical vapour deposition of titanium dioxide coatings on glass

Atmospheric pressure chemical vapour deposition of titanium dioxide coatings on glass substrates was achieved by the reaction of TiCl4 and a co-oxygen source (MeOH, EtOH, (PrOH)-Pr-i or H2O) at 500-650degreesC. The coatings show excellent uniformity, surface coverage and adherence. Growth rates were of the order of 0.3 mum min(-1) at 500degreesC. All films are crystalline and single phase with XRD showing the anatase TiO2 diffraction pattern; a = 3.78(1), c = 9.51(1) Angstrom. Optically, the films show minimal reflectivity from 300-1600 nm and 50-80% total transmission from 300-800 nm. Contact angles are in the range 20-40degrees for as-prepared films and 1-10degrees after 30 min irradiation at 254 nm. All of the films show significant photocatalyic activity as regards the destruction of an overlayer of stearic acid.

Multiple self-aligned iron nanowires by a dual selective chemical vapor deposition process

We have demonstrated a self-aligned process to fabricate organized iron nanowires on a planarized surface with wire dimensions down to 50 nm. Polishing was used to expose an alternating silicon silicon dioxide edge and a dual selective metal deposition process produced the nanowires. The initial selective deposition produced a tungsten layer on the exposed polysilicon regions. The discovery that selective chemical vapor deposition of iron from Fe(CO)(5) precursor on dielectric surfaces over tungsten surfaces is the key factor that enables the self-alignment of the iron nanowires. Dimensions of the wires are determined by the thickness of the thermal oxide. (c) 2007 The Electrochemical Society.

Chemical vapour deposition of vanadium oxide thermochromic thin films

Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films – both undoped and doped with tungsten, niobium and gold nanoparticles – which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition

The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature