The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy

Autoria(s): Campbell, P.A.; Walmsley, D.G.; Chong, R.L.F.; Gay, D.L.; Gamble, Harold; McNeill, David
Data(s)

01/03/1998
Identificador

http://pure.qub.ac.uk/portal/en/publications/the-effect-of-germane-variation-on-microstructure-in-polycrystalline-sisige-thin-films-grown-by-rapid-thermal-chemical-vapour-deposition-fractal-characterisation-using-scanning-probe-microscopy(7802ae66-57a8-4619-a533-6ceada36dbea).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Campbell , P A , Walmsley , D G , Chong , R L F , Gay , D L , Gamble , H & McNeill , D 1998 , ' The effect of germane variation on microstructure in polycrystalline Si/SiGe thin films grown by rapid thermal chemical vapour deposition: fractal characterisation using scanning probe microscopy ' Applied Physics A - Materials Science & Processing , vol 66(1-2) , pp. S1067-S1071 .
Tipo

article
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