Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition


Autoria(s): Costa i Balanzat, Josep; Roura Grabulosa, Pere; Morante i Lleonart, Joan R.; Bertrán Serra, Enric
Data(s)

1998

Resumo

Previous results concerning radiative emission under laser irradiation of silicon nanopowder are reinterpreted in terms of thermal emission. A model is developed that considers the particles in the powder as independent, so under vacuum the only dissipation mechanism is thermal radiation. The supralinear dependence observed between the intensity of the emitted radiation and laser power is predicted by the model, as is the exponential quenching when the gas pressure around the sample increases. The analysis allows us to determine the sample temperature. The local heating of the sample has been assessed independently by the position of the transverse optical Raman mode. Finally, it is suggested that the photoluminescence observed in porous silicon and similar materials could, in some cases, be blackbody radiation

Formato

application/pdf

Identificador

Costa i Balanzat, Josep, Roura i Grabulosa, Pere, Morante i Lleonart, Joan R., i Bertran Serra, Enric (1998). Blackbody emission under laser excitation of silicon nanopowder produced by plasma-enhanced chemical-vapor deposition. Journal of Applied Physics, 83 (12), 7879 - 7885. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v83/i12/p7879_s1

0021-8979

http://hdl.handle.net/10256/3050

http://dx.doi.org/10.1063/1.367965

Idioma(s)

eng

Publicador

American Institute of Physics

Relação

Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.367965

© Journal of Applied Physics, 1998, vol. 83, p. 7879-7885

Articles publicats (D-F)

Direitos

Tots els drets reservats

Palavras-Chave #Espectroscòpia de Raman #Fotoluminescència #Semiconductors #Silici #Photoluminescence #Raman spectroscopy #Silicon
Tipo

info:eu-repo/semantics/article