Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition
Data(s) |
01/04/1997
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Resumo |
The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P)=I0exp(-P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature |
Formato |
application/pdf |
Identificador |
Roura i Grabulosa, Pere, Costa i Balanzat, Josep, Morante i Lleonart, Joan. R, i Bertran Serra, Enric (1997). Gas collisions and pressure quenching of the photoluminescence of silicon nanopowder grown by plasma-enhanced chemical vapor deposition. Journal of Applied Physics, 81 (7), 3290 - 3293. Recuperat 28 setembre 2010, a http://jap.aip.org/resource/1/japiau/v81/i7/p3290_s1 0021-8979 |
Idioma(s) |
eng |
Publicador |
American Institute of Physics |
Relação |
Reproducció digital del document publicat a: http://dx.doi.org/10.1063/1.364312 © Journal of Applied Physics, 1997, vol. 81, núm. 7, p. 3290-3293 Articles publicats (D-F) |
Direitos |
Tots els drets reservats |
Palavras-Chave | #Fotoluminescència #Semiconductors #Materials nanoestructurals #Silici #Nanostructure materials #Photoluminescence #Silicon |
Tipo |
info:eu-repo/semantics/article |