缺陷俘获势垒测定新方法-瞬态光霍耳谱

以瞬态光霍尔测量为基础,建立了观测俘获过程的深中心分析测试新手段.该方法不需要做肖特基结、p-n结、或MIS结构,几乎可在零电场下测量缺陷参数,克服电场、德拜带尾、非指数瞬态等对缺陷特性的影响,也克服了深能级瞬态谱技术(DLTS)只能通过载流子发射过程间接测量俘获参数的缺点.用此方法测量了Ga_(0.7)Al_(0.3)As中DX中心的俘获势垒.

InGaAs/GaAs应变层量子阱激光器深中心行为

应用深能级瞬态谱(DLTS)技术研究分子束外延(MBE)和二次液相外延(LPE)生长的InGaAs/GaAs应变层量子阱激光器深中心行为,在MBE激光器的n-Al_xGa_(1-x)As组分缓变层和限制层里,除众所周知的DX中心外,还观察到有较大俘获截面的深(空穴、电子)陷阱及其相互转化.这些陷阱可能分布在x从0到0.40和x=0.40的n-Al_xGa_(1-x)As层里x值不连续的界面附近.而在LPE激光器的n-Al_xGa_(1-x)As组分缓变层和限制层里,DX中心浓度明显减少,且深(空穴、电子)陷阱消失,这表明LPE掩埋结构工艺可能对激光器深中心的消除或减少有一定作用.深中心的变化与样品阈值电流密度的改善是相符的.

MBE和MOCVD生长的AlGaAs/GaAs GRIN-SCH SQW激光器深中心的比较

应用深能级瞬态谱(DLTS)技术详细研究分子束外延(MBE)和金属有机物化学汽相淀积(MOCVD)生长的AlGaAs/GaAs激光器的深中心。结果表明,在激光器的n-AlGaAs层里除众所周知的DX中心外,还存在着较大浓度和俘获截面的深(电子或空穴)陷阱,它们直接影响着激光器的性能。

低压-金属有机物汽相外延生长的Ga（1-x）InxAs/InP激光器中深能级的研究

应用深能级瞬态谱(DLTS)技术详细研究低压-金属有机物汽相外延(LP-MOVPE)生长的Ga_(0.74)In_(0.53)As/InP量子阱、宽接触和质子轰击条形异质结激光器中的深能级。样品的DLTS表明,在宽接触激光器的i-Ga_(0.47)In(0.53)As有源层里观察到 H1(Ev+0.09eV)和E1(E_c-0.35eV)陷阱,它们可能分别与样品生长过程中扩散到i-Ga_(0.47)In_(0.53)As有源层的Zn和材料本身的原生缺陷有关。而条形激光器的i-Ga_(0.47)In_(0.53)A_s有源层的 H_2(E_v+0.11eV)和 E_2(E_q-0.42eV)陷阱则可能是H1和E1与质子轰击引起的损伤相互作用的产物 。

硅直接键合界面附近的深能级研究

利用扩展电阻探针(SRP)和深能级瞬态谱(DLTS)技术详细研究了直接键合的n-si/n~+-si界面附近的深能级.实验结果表明,在直接键合的n-Si/n~+-si一侧附近可观察到一个明显的电子陷阱E1(E_c-0.39eV),E1可能是由若干个能级位置相近的陷阱迭加而成的,其浓度在10~(13)-10~(14)cm~(-3)之间.它可能是与制备键合材料的高温(1000-1100℃)处理过中程产生的空位和热应力有关。

超晶格电子辐照缺陷的亚稳态特性

用深能级瞬态谱(DLTS)系统地研究了GaAs(50A)/GaAlAs(50A)超晶格中的电子辐照缺陷,证实其亚稳态特性的存在,对其恢复温度、转变条件进行了研究,指出在体材料中不能观察到电子辐照缺陷亚稳态的原因。

（Pt及其硅化物）/硅界面的深能级研究

利用深能级瞬态谱(DLTS), 详细研究了(Pt及其硅化物)/Si界面上存在的各种深能级缺陷中心,并分析了引起这些缺陷的原因及与界面原子结构的关系。

Annealing ambient controlled deep defect formation in InP

Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.

Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Electronic characteristics of InAs self-assembled quantum dots

Deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled InAs quantum dots formed in GaAs matrices. The use of n- and p-type GaAs matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. From analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 meV below the bottom of the GaAs conduction band and heavy-hole levels at 90 meV above the top of the GaAs valence band. Combining with the photoluminescence results, the band structures of InAs and GaAs have been determined. (C) 2000 Elsevier Science B.V. All rights reserved.

Electronic investigation of self-organized InAs quantum dots

Deep Level Transient Spectroscopy (DLTS) has been applied to investigate the electronic properties of self-organized InAs quantum dots. The energies of electronic ground states of 2.5ML and 1.7ML InAs quantum dots (QDs) with respect to the conduction band of bulk GaAs are about 0.21 eV and 0.09 eV, respectively. We have found that QDs capture electrons by lattice relaxation through a multi-phonon emission process. The samples are QDs embedded in superlattices with or without a 500 Angstrom GaAs spacing layer between every ten periods of a couple of GaAs and InAs layers. The result shows that the density of dislocations in the samples with spacer layers is much lower than in the samples without the spacer layers.

An EORTC phase I study of capecitabine (Xeloda) in combination with fixed doses of cyclophosphamide and epirubicin (cex) as primary treatment for large operable or locally advanced/inflammatory breast cancer.

In breast cancer, chemotherapy regimens that include infusional 5-fluorouracil (5-FU) lead to high response rates, but require central venous access and pumps. To avoid these inconveniences, we substituted infusional 5-FU with capecitabine. The main objective of this study was to determine the maximum tolerated dose (MTD) of capecitabine when given in combination with fixed doses of epirubicin and cyclophosphamide (100 and 600 mg/m(2) day 1 every (q) 3 weeks) as primary treatment for large operable or locally advanced/inflammatory breast cancer without distant metastasis. Capecitabine was escalated from 750 mg/m(2) twice a day (bid) to 1250 mg/m(2) bid from day 1 to day 14 in four dose levels. Dose escalation was permitted if 0/3 or 1/6 patients experienced dose-limiting toxicity (DLT). A total of 23 patients were included and 117 courses were administered. At dose level 4, 2 of 2 patients presented DLTs defining the MTD. A high rate of capecitabine treatment modification was required with capecitabine 1050 mg/m(2) bid (dose level 3). 19 patients achieved an objective response (83%). In conclusion, we believe that capecitabine 900 mg/m(2) bid (dose level 2) is the recommended dose in combination with epirubicin 100 mg/m(2) and cyclophosphamide 600 mg/m(2). The acceptable toxicity profile and encouraging activity of this regimen warrant further evaluation.

An EORTC phase I study of epirubicin in combination with fixed doses of cyclophosphamide and infusional 5-fu (CEF-infu) as primary treatment of large operable or locally advanced/inflammatory breast cancer.

PURPOSE: The association of continuous infusion 5-fluorouracil, epirubicin (50 mg/m2 q 3 weeks) and a platinum compound (cisplatin or carboplatin) was found to be very active in patients with either locally advanced/inflammatory (LA/I) [1, 2] or large operable (LO) breast cancer (BC) [3]. The same rate of activity in terms of response rate (RR) and response duration was observed in LA/I BC patients when cisplatin was replaced by cyclophosphamide [4]. The dose of epirubicin was either 50 mg/m2 [ 1, 2, 3] or 60 mg/m2/cycle [4]. The main objective of this study was to determine the maximum tolerated dose (MTD) of epirubicin when given in combination with fixed doses of cyclophosphamide and infusional 5-fluorouracil (CEF-infu) as neoadjuvant therapy in patients with LO or LA/I BC for a maximum of 6 cycles. PATIENTS AND METHODS: Eligible patients had LO or LA/I BC, a performance status 0-1, adequate organ function and were <65 years old. Cyclophosphamide was administered at the dose of 400 mg/m2 day 1 and 8, q 4 weeks and infusional 5-fluorouracil 200 mg/m2/day was given day 1-28, q 4 weeks. Epirubicin was escalated from 30 to 45 and to 60 mg/m2 day 1 and 8; dose escalation was permitted if 0/3 or 1/6 patients experienced dose limiting toxicity (DLT) during the first 2 cycles of therapy. DLT for epirubicin was defined as febrile neutropenia, grade 4 neutropenia lasting for >7 days, grade 4 thrombocytopenia, or any non-haematological toxicity of CTC grade > or =3, excluding alopecia and plantar-palmar erythrodysesthesia (this toxicity was attributable to infusional 5-fluorouracil and was not considered a DLT of epirubicin). RESULTS: A total of 21 patients, median age 44 years (range 29-63) have been treated. 107 courses have been delivered, with a median number of 5 cycles per patient (range 4-6). DLTs on cycles I and 2 on level 1, 2, 3: grade 3 (G3) mucositis occurred in 1/10 patients treated at the third dose level. An interim analysis showed that G3 PPE occurred in 5/16 pts treated with the 28-day infusional 5-FU schedule at the 3 dose levels. The protocol was subsequently amended to limit the duration of infusional 5-fluorouracil infusion from 4 to 3 weeks. No G3 PPE was detected in 5 patients treated with this new schedule. CONCLUSIONS: This study establishes that epirubicin 60mg/m2 day 1 and 8, cyclophosphamide 400mg/m2 day 1 and 8 and infusional 5-fluorouracil 200 mg/m2/day day 1-21. q 4 weeks is the recommended dose level. Given the encouraging activity of this regimen (15/21 clinical responses) we have replaced infusional 5-fluorouracil by oral capecitabine in a recently activated study.

Vandetanib with FOLFIRI in patients with advanced colorectal adenocarcinoma: results from an open-label, multicentre phase I study.

The safety and tolerability of vandetanib (ZACTIMA; ZD6474) plus FOLFIRI was investigated in patients with advanced colorectal cancer (CRC). METHODS: Patients eligible for first- or second-line chemotherapy received once-daily oral doses of vandetanib (100 or 300 mg) plus 14-day treatment cycles of FOLFIRI. RESULTS: A total of 21 patients received vandetanib 100 mg (n = 11) or 300 mg (n = 10) + FOLFIRI. Combination therapy was well tolerated at both vandetanib dose levels. There were no DLTs in the vandetanib 100 mg cohort and one DLT of hypertension (CTCAE grade 3) in the 300 mg cohort. The most common adverse events were diarrhoea (n = 20), nausea (n = 12) and fatigue (n = 10). Two patients (one in each cohort) discontinued vandetanib due to adverse events (rash, 100 mg cohort; hypertension, 300 mg cohort). There was no apparent pharmacokinetic interaction between vandetanib and FOLFIRI. Preliminary efficacy results included two confirmed partial responses in the 100 mg cohort and 9 patients with stable disease > or =8 weeks (100 mg, n = 7; 300 mg, n = 2). CONCLUSIONS: Once-daily vandetanib (100 or 300 mg) in combination with a standard FOLFIRI regimen was generally well tolerated in patients with advanced CRC.