Proof of InAs/GaAs self-organized quantum dot lasing and the experimental determination of local Strain effect on the band structures

Confirmation of quantum dot lasing have been given by photoluminescence and electro-luminescence spectra. Energy levels of QD laser are distinctively resolved due to band filling effect, and the lasing energy of quantum dot laser is much lower than quantum well laser. The energy barrier at InAs/GaAs interface due to the built-in strain in self-organized system has been determined experimentally by deep level transient spectroscopy (DLTS). Such barrier has been predicted by previous theories and can be explained by the apexes appeared in the interface between InAs and GaAs caused by strain.

Deutsch Forsch Gemeinsch.; IFV Kompetenzzentrum TEMA B.; AIXTRON AG.; DaimlerChrysler AG.; EPICHEM Ltd.; Freiberger Compound Mat GmbH.; Infineon Technologies AG.; RIBER GmbH.; United Monolith Semiconductors GmbH.; VTS CreaTec GmbH.; Wafer Technol Ltd.