Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy
Data(s) |
2001
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Resumo |
Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases. Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:40Z (GMT). No. of bitstreams: 1 2853.pdf: 159299 bytes, checksum: 9d3d45095eabc6443cedd43845322b0c (MD5) Previous issue date: 2001 Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc. Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc. |
Identificador | |
Idioma(s) |
英语 |
Publicador |
IEEE 345 E 47TH ST, NEW YORK, NY 10017 USA |
Fonte |
Lu LW; Ge WK; Sou IK; Wang J .Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy .见:IEEE .SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2001,1446-1448 |
Palavras-Chave | #半导体材料 #ZNSTE |
Tipo |
会议论文 |