Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy


Autoria(s): Lu LW; Ge WK; Sou IK; Wang J
Data(s)

2001

Resumo

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

Deep level transient spectroscopy (DLTS) technique was used to investigate deep electron states in n-type Al-doped ZnS1-xTex epilayers grown by molecular fiction epitaxy (MBE), Deep level transient Fourier spectroscopy (DLTFS) spectra of the Al-doped ZnS1-xTex (x = 0. 0.017, 0.04 and 0.046. respectively) epilayers reveal that At doping leads to the formation of two electron traps at 0.21 and 0.39 eV below the conduction hand. 1)DLTFS results suggest that in addition to the rules of Te as a component of [lie alloy as well as isoelectronic centers, Te is also involved in the formation of all electron trip, whose energy level relative to the conduction hand decreases a, Te composition increases.

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Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.

Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Chinese Inst Electr.; IEEE Beijing Sect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE EDS Shanghai Chapter.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; IEE, Electr Div.; IEE Korea.; Assoc Asia Pacific Phys Soc.

Identificador

http://ir.semi.ac.cn/handle/172111/13683

http://www.irgrid.ac.cn/handle/1471x/105023

Idioma(s)

英语

Publicador

IEEE

345 E 47TH ST, NEW YORK, NY 10017 USA

Fonte

Lu LW; Ge WK; Sou IK; Wang J .Observation of deep electron states in n-type Al-doped ZnS1-xTex grown by molecular beam epitaxy .见:IEEE .SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS,345 E 47TH ST, NEW YORK, NY 10017 USA ,2001,1446-1448

Palavras-Chave #半导体材料 #ZNSTE
Tipo

会议论文