GROWTH OF HIGH-QUALITY GALLIUM-ARSENIDE ON HF-ETCHED SILICON (001) BY CHEMICAL BEAM EPITAXY

HF etching followed by relatively low temperature (almost-equal-to 600-degrees-C) pretreatment is shown to provide a suitable substrate for the heteroepitaxial growth of GaAs on Si(100) by CBE using TEGa and AsH3 as sources. Rutherford backscattering (RBS), photoluminescence (PL), transmission electron microscopy (TEM), and Raman measurements show the low-defect nature of the GaAs epilayer.

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

Films of GaN have been grown using a modified MBE technique in which the active nitrogen is supplied from an RF plasma source. Wurtzite films grown on (001) oriented GaAs substrates show highly defective, ordered polycrystalline growth with a columnar structure, the (0001) planes of the layers being parallel to the (001) planes of the GaAs substrate. Films grown using a coincident As flux, however, have a single crystal zinc-blende growth mode. They have better structural and optical properties. To improve the properties of the wurtzite films we have studied the growth of such films on (111) oriented GaAs and GaP substrates. The improved structural properties of such films, assessed using X-ray and TEM method, correlate with better low-temperature FL.

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Dissociated screw dislocation which can relieve strain energy in the epitaxial layer of GeSi on Si(001)

A dissociated screw dislocation parallel to the interface was found in the epitaxial layer of the Ge0.17Si0.83 Si(001) system. It is shown that this dissociated screw dislocation which consists of two 30 degrees partials can relieve misfit strain energy, and the relieved misfit energy is proportional to the width of the stacking fault between the two partials.

Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix

We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.

PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX

Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence acid time-resolved photoluminescence, It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. (C) 1995 American Institute of Physics.

DCXRD Investigation of a Ge/Si（001） Island Multilayer Structure

A Ge/Si（001） island multilayer structure is investigated by double crystal X-ray diffraction, transmission electron microscopy,and atomic force microscopy. We fit the satellite peaks in the rocking curve by two Lorentz lineshapes, which originate from the wetting layer region and the island region. Then from the ratio of the thick- nesses of the Si and Ge （GeSi） layers as determined by TEM,tbe Ge compositions of the wetting layer and islands are estimated to be about 0. 51 and 0. 67, respectively,according to the positions of the fitted peaks. This proves to be a relatively simple way to investigate the Ge/Si （001） island multilayer structure.

InAs Wires on InP （001）

The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently.

在复合衬底γ-Al2O3／Si（001）上生长GaN

采用分子束外延（MBE）生长方法，使用γ-Al2O3材料作为新型过渡层，在Si（001）衬底上获得了没有裂纹的GaN外延层，实验结果表明使用γ-Al2O3过渡层有效地缓解了外延层中的应力．通过生长并测试分析几种不同结构的外延材料，研究了复合衬底γ-Al2O3／Si（001）生长GaN情况，得到了六方相GaN单晶材料，实现了GaNC面生长．预铺薄层Al及高温AIN层可以提高GaN晶体质量，低温AIN缓冲层可以改善GaN表面的粗糙度．为解决Si（001）衬底上GaN的生长问题提供了有益的探索。

Twinning in Low-Temperature MOCVD Grown GaN on (001) GaAs Substrate

GaN buffer layers (thickness ～60nm) grown on GaAs(001) by low-temperature MOCVD are investigated by X-ray diffraction pole figure measurements using synchrotron radiation in order to understand the heteroepitaxial growth features of GaN on GaAs(001) substrates. In addition to the epitaxially aligned crystallites,their corresponding twins of the first and the second order are found in the X-ray diffraction pole figures. Moreover, { 111 } q scans with χ at 55° reveal the abnormal distribution of Bragg diffractions. The extra intensity maxima in the pole fig ures shows that the process of twinning plays a dominating role during the growth process. It is suggested that the polarity of { 111 } facets emerged on (001) surface will affect the growth-twin nucleation at the initial stages of GaN growth on GaAs(001) substrates. It is proposed that twinning is prone to occurring on { 111 } B, N-terminated facets.

InP(001)基衬底上自组织生长InAs量子点（线）的光学性质研究

在InP(001)基衬底上用分子束外延方法生长InAs纳米结构材料,通过衬底的旋转与否及混合生长模式,得到了两种InAs量子点和量子线，并研究了量子点、线的光学性质。结果表明，两种方式都可生长出较强发光的量子点(线)；由量子点排列构成的量子线的光致发光光谱呈现出多峰结构，分析和理论计算表明这是InAs量子线上各量子点在垂直方向上不同高度分布和非连续性而造成的。

GaN/GaAs(001)与GaN/Al_2O_3(0001)外延层光辅助湿法腐蚀行为的比较

研究了用金属有机物气相外延（MOVPE）方法在GaAs(001)衬底上生长的立方相GaN(c-GaN)外延层的光辅助湿法腐蚀特性，并和生长在蓝宝石（0001）衬底上的六方相GaN(h-GaN)外延层的光辅助湿法座蚀特性进行了比较。实验发现c-GaN膜的暗态电流和光电流的变化不同于h-GaN膜的腐蚀电流的变化规律。对引起上述差异的原因进行了简单的讨论。