PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX
| Data(s) |
1995
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|---|---|
| Resumo |
Optical properties of single submonolayer InAs structures grown on GaAs (001) matrix are systematically investigated by means of photoluminescence acid time-resolved photoluminescence, It is shown that the formation of InAs dots with 1 ML height leads to localization of excitons under certain submonolayer InAs coverages, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. (C) 1995 American Institute of Physics. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
LI W; WANG ZG; LIANG JB; XU B; ZHU ZP; YUAN ZL; LI JA .PHOTOLUMINESCENCE STUDIES OF SINGLE SUBMONOLAYER INAS STRUCTURES GROWN ON GAAS (001) MATRIX ,APPLIED PHYSICS LETTERS ,1995,67(13):1874-1876 |
| Palavras-Chave | #半导体材料 #QUANTUM |
| Tipo |
期刊论文 |
