INVESTIGATION OF THE EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS(001) AND EXTENSION OF 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION


Autoria(s): LI W; WANG ZG; LIANG JB; LIAO QW; XU B; ZHU ZP; YANG B
Data(s)

1995

Identificador

http://ir.semi.ac.cn/handle/172111/15589

http://www.irgrid.ac.cn/handle/1471x/101833

Idioma(s)

英语

Fonte

LI W; WANG ZG; LIANG JB; LIAO QW; XU B; ZHU ZP; YANG B .INVESTIGATION OF THE EPITAXIAL-GROWTH OF INXGA1-XAS ON GAAS(001) AND EXTENSION OF 2-DIMENSIONAL 3-DIMENSIONAL GROWTH MODE TRANSITION ,APPLIED PHYSICS LETTERS ,1995,66(9):1080-1082

Palavras-Chave #半导体材料
Tipo

期刊论文