PHOTOLUMINESCENCE OF THE RESIDUAL SHALLOW ACCEPTOR IN INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY

Autoria(s): XU ZY; XU JZ; ANDERSSON TG; CHEN ZG
Data(s)

1989
Identificador

http://ir.semi.ac.cn/handle/172111/14497

http://www.irgrid.ac.cn/handle/1471x/101283
Idioma(s)

英语
Fonte

XU ZY; XU JZ; ANDERSSON TG; CHEN ZG.PHOTOLUMINESCENCE OF THE RESIDUAL SHALLOW ACCEPTOR IN INXGA1-XAS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY,SOLID STATE COMMUNICATIONS ,1989,70(5):505-509
Palavras-Chave #光电子学
Tipo

期刊论文
Acesso ao item digital