InAs Wires on InP （001）
| Data(s) |
2006
|
|---|---|
| Resumo |
The heterostructure of InAs/In0.52Al0.48As/InP is unique in that InAs wires instead of dots self-assemble in molecular beam epitaxy. These InAs wires have some distinctive features in their growth and structure. This paper summarizes the investigations of the growth and structural properties of InAs wires that have been performed in our laboratory recently. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Wu Ju;Wang Zhanguo.InAs Wires on InP （001）,半导体学报,2006,27(2):197-203 |
| Palavras-Chave | #半导体材料 |
| Tipo |
期刊论文 |
