Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix
| Data(s) |
1995
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| Resumo |
We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs (001) matrix. It is shown that the formation of InAs dots with 1 monolayer (ML) height leads to localization of exciton under certain submonolayer InAs coverage, which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures. 于2010-11-17批量导入 zhangdi于2010-11-17 14:17:01导入数据到SEMI-IR的IR Made available in DSpace on 2010-11-17T06:17:01Z (GMT). No. of bitstreams: 1 7069.pdf: 272125 bytes, checksum: 439b193d3108af206e044b81c6119e74 (MD5) Previous issue date: 1995 ACAD SINICA,INST SEMICOND,NATL SEMICOND SUPERLATTICE LAB,BEIJING 100083,PEOPLES R CHINA; INST SEMICOND,NATL INTEGRATED OPTOELECTR LAB,BEIJING 100083,PEOPLES R CHINA |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Li W; Wang ZG; Liang JB; Xu B; Zhu ZP; Yuan ZL; Li J .Photoluminescence studies of single submonolayer InAs structures grown on GaAs (001) matrix ,CHINESE PHYSICS LETTERS,1995,12(11):697-700 |
| Palavras-Chave | #半导体材料 #QUANTUM |
| Tipo |
期刊论文 |
