EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION

Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed.

Energy level analyses of even-parity J=1 and 2 Rydberg states of Sn I by multichannel quantum defect theory

This paper analyzes the energy levels along the even-parity J=1 and 2 Rydberg series of Sn I by multichannel quantum defect theory. A good agreement between theoretical and experimental energy levels was achieved. Below 59198 cm~(-1), a total of 85 and 23 new energy levels, respectively, in the J=1 and J=2 series, which cannot be measured previously by experiments, are predicted in this work. Based on the calculated admixture coefficients of each channel, interchannel interactions were discussed in detail. The results are helpful to understand the characteristics of configuration interaction among even-parity levels in Sn I.

掺Sn的In_20_3透明导电膜生长优先取向对其光电性能的影响

采用反应热蒸发法制备掺sn的In_20_3（ITO）透明导电膜，系统研究了ITO薄膜生长的优先取向对其光电性能的影响，结果表明，ITO薄膜（400）取向的优先生长对其透过率影响很小，但可明显增加载流子迁移率，从而有效降低了薄膜的方块电阻。在两个相同的薄膜硅／单晶硅太阳能电池上分别沉积（222）和（400）ITO优先取向膜，光电转换效率分别为10．3％和12．9％，表明（400）取向更有利于提高电池效率。经优化，最佳衬底温度（T_s）为225℃，最佳氧流量（fo_2）为4sccm。在优化的沉积条件下制备ITO薄膜，其电阻率可达到4.8x10~(-4)Ω·cm，可见波段的透过率大于90％，性能指数为3.8×10~(-2)□/Ω。

Pt/n-GaN肖特基接触的退火行为

在金属有机物气相外延（MOVPE）方法生长的非故意掺杂的n-GaN上用Pt制成了肖特基接触，并在250-650℃范围内对该接触进行退火。通过实验发现，Pt与非故意掺杂n-GaN外延薄膜可以形成较好的肖特基接触，而适当的退火温度可以有效地改善Pt/n-GaN肖特基接触的性质。在该实验条件下，400℃温度下退火后的Pt/n-GaN肖特基接触，势垒高度最大，理想因子最小。在600℃以上温度退火后，该接触特性受到破坏，SEM显示在该温度下，Pt已经在GaN表面凝聚成球，表面形成孔洞。

Pt-Ni/p-InP低阻欧姆接触的机理研究

利用X射线衍射和AES(俄歇)方法，深入地研究了RF磁探溅射淀积的Pt-Ni/p-InP(100)非合金膜系在热退火过程中Pt和Ni与衬底InP中的In和P形成稳定化合物的行为，揭示了比接触电阻降低于3×10~(-6)Ω·cm~2的根本原因。

（Pt及其硅化物）/硅界面的深能级研究

利用深能级瞬态谱(DLTS), 详细研究了(Pt及其硅化物)/Si界面上存在的各种深能级缺陷中心,并分析了引起这些缺陷的原因及与界面原子结构的关系。

Pt/Si界面反应与肖特基势垒形成的研究

详细研究了Pt/Si和Pt硅化物/Si界面的反应性质、原子结构及杂质/缺陷分布，讨论了它们对肖特基势垒的形成、势垒特性和势垒高度的影响。

硅化物形成条件对Pt硅化物/硅势垒的影响

对PtSi/N-Si和PtSi/P-Si两种肖特基势垒的形成条件与势垒高度之间的关系进行了详细研究。从理论上分析了在退火过程中引入的影响肖特基势垒特性的各种因素，同时指出了获得理想肖特基势垒的退火条件。

Ni/Si,Pt/Si,Ir/Si系的As离子注入和退火

于2010-11-23批量导入

退火气氛中痕量氧在反应形成pt硅化物中的作用

于2010-11-23批量导入

Determination of the interdiffusion coefficients of liquid Zn and Sn using Ta/Zn-Sn/Si trilayers

In this paper we present a new method for measuring diffusion coefficients in liquid metals under convection-less conditions with solid/liquid-liquid/solid trilayer. The advantage of this kind of trilayer is that effects from gravity-induced convection and Marangoni-convection can be omitted, so that the diffusion coefficient is determined more accurately. The Ta/Zn-Sn/Si trilayer were prepared with a multi-target ion-beam sputtering deposition technique and annealed in an electric furnace under an argon atmosphere. The interdiffusion of liquid zinc and tin at 500 degrees degree C was investigated. The diffusion concentration profiles were determined by energy dispersive spectroscopy. The interdiffusion coefficients range from 1.0x10(-6)cm(2)/s to 2.8x10(-6)cm(2)/s, which is less than previous values measured by capillary reservoir technique under 1g-environment where various convection exist. The precise interdiffusion coefficients of liquid zinc and tin result from the removing of disturbances of various kinds of convection.