EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION
Data(s) |
1993
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Resumo |
Electrical measurements were combined with surface techniques to study the Pt/Si interfaces at various silicide formation temperatures. Effects of deep centers on the Schottky barrier heights were studied. Hydrogen plasma treatment was used to passivate the impurity/defect centers at the interfaces, and the effects of hydrogenation on the Schottky barrier heights were also examined. Combining our previous study on the Pt/Si interfacial reaction, factors influencing the PtSi/Si Schottky barrier diode are discussed. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
HSU CC; DING SA; LU LW; ZHOU J.EFFECTS OF DEEP CENTERS AT PT SI INTERFACES AND HYDROGENATION,APPLIED SURFACE SCIENCE ,1993,70-71(0):438-441 |
Palavras-Chave | #半导体材料 |
Tipo |
期刊论文 |