1ST PRINCIPLES PSEUDOPOTENTIAL CALCULATIONS OF ZONE BOUNDARY PHONON FREQUENCIES OF III-V-ZINCBLENDE SEMICONDUCTORS

Longitudinal zone boundary X phonon frequencies have been calculated by a first principles pseudopotential method for III-V zincblende semiconductors AlP, AlAs, AlSb, GaP, GaAs, GaSb, InP, InAs and InSb. The phonon frequencies have been evaluated from total energy calculations in the frozen phonon approximation. The calculated phonon frequencies agree very well with the experimental values.

Structures of energy spectrum and persistent currents in mesoscopic rings with radial potential barrier in magnetic field

The energy spectrum and the persistent currents are calculated for finite-width mesoscopic annular structures with radial potential barrier in the presence of a magnetic field. The introduction of the tunneling barrier leads to the creation of extra edge states around the barrier and the occurrence of oscillatory structures superimposed on the bulk Landau level plateaus in the energy spectrum. We found that the Fermi energy E-F increases with the number of electrons N emerging many kinks. The single eigenstate persistent current exhibits complicated structures with vortex-like texture, ''bifurcation'', and multiple ''furcation'' patterns as N is increased. The total currents versus N display wild fluctuations.

Luminescence properties of ZnSe films grown by hot wall epitaxy

The photoluminescence (PL) properties of ZnSe films grown by hot wall epitaxy are reported. The PL spectra show clear neutral donor-bound exciton peak; donor acceptor pair (DAP) peak, conduction band to acceptor (CA) peak, and their phonon replicas until fourth order. The conduction band to acceptor peak and it's phonon replicas exist until room temperature. From the ratio of PL intensities of DAP and CA peaks and their replicas, we obtain the Huang-Rhys factor S = 0.58, in agreement with other experiments for acceptor-bound exciton transitions. From the temperature dependence of PL intensities we derive the activation energy of thermal quenching process for the DAP transitions as about 7 meV.

Properties of cubic GaN grown by MBE

We review our investigation of cubic GaN films on (001) GaAs, focusing on the structural, optical, and electrical properties of these films. Cubic GaN films grown epitaxially on GaAs suffer from the large lattice mismatch between these two materials in that they contain extremely high densities of structural defects. Surprisingly, the optical quality of these films does not seem much affected by the presence of defects, as intense photoluminescence is detected a? room temperature and above. Finally, the rather high background electron concentrations in our films is shown to be a consequence of contamination with O and not to be an intrinsic property of cubic phase GaN. (C) 1997 Elsevier Science S.A.

THERMAL POPULATION IN ASYMMETRIC DOUBLE WELLS COUPLED BY HOLE MIXING TUNNELING

The thermal population in photocarrier systems coupled by hole mixing tunneling is studied by an analysis of the high energy tails in cw photoluminescence spectra of asymmetric coupled double wells. Photocarriers in wide well are heated due to hole transfer from the narrow well through resonant tunneling as well as by photon heating. The influences of the excitation intensity and lattice temperature on the tunneling transfer and thermal population are discussed.

近邻边界Fisher判别分析

将数据集进行合理的维数约简对于一些机器学习算法效率的提高起着至关重要的影响.该文提出了一种利用数据点邻域信息的线性监督降维算法:近邻边界Fisher判别分析(Neighborhood Margin Fisher Discriminant Analysis,NMFDA).NMFDA尝试将每一数据点邻域内最远的同类数据点和最近的异类数据点之间的边界在投影子空间内尽可能地扩大,从而提高基于距离的识别算法的准确率.同时为了解决非线性降维问题,提出了Kernel NMFDA,通过在几个标准人脸数据库上与其它降维算法的对比识别实验,验证了提出算法的有效性.

LBO晶体非临界相位匹配倍频研究

利用LBO晶体对Nd:YAG ns激光器进行了腔外倍频实验研究,实验中LBO晶体采用I类非临界相位匹配(NCPM),温度调谐,将倍频转换效率和温度调谐的理论值与实验数据进行了对比,实验结果基本与理论值相符,当基频光的单脉冲能量为1.3J时,获得了840mJ的532nm倍频绿光输出,最高转换效率达到65%,倍频光能量不稳定度小于±3%

通过倾斜多晶硅p-n结光电器件提高光电转换性能

本研究针对多晶硅p-n结光伏器件开展工作。基于倾斜光电转换器件的思想，倾斜本研究采用的光电转换器件使入射光线与器件表面法线成75度的夹角，从而使红外光在器件内形成多次全反射。这种内部全反射增加了光在器件内的光程，使得光在器件内的吸收得以增加。从采光的角度上发现，倾斜多晶硅光电转换器件可使器件的光电转换效率提高15%。此外，还发现了由倾斜器件造成开路电压稍微减小的现象并给予了解释。

6H—SiC Schottky二极管的正向特性

提出了一种考虑Schottky结势垒不均匀性和界面层作用的SiC Schottky二极管(SBD)正向特性模型，势垒的不均匀性来自于SiC外延层上的各种缺陷，而界面层上的压降会使正向Schottky结的有效势垒增高．该模型能够对不同温度下SiC Schottky结正向特性很好地进行模拟，模拟结果和测量数据相符．它更适用于考虑器件温度变化的场合，从机理上说明了理想因子、有效势垒和温度的关系．

手动跟踪方阵面上辐照度及曝辐量计算公式的推导

推导出了方位角手动跟踪和极轴时角手动跟踪方阵面上曝辐量及辐照度的计算公式。根据二连浩特实测的日射资料，计算了不同手动跟踪方阵面上各月的曝辐量，比较了不同跟踪方式下太阳电池方阵各月接受的曝辐量。

快速响应SOI马赫曾德热光调制器

给出了Y分支MZI热光调制器的模型，实验研制了基于SOI（silicon-on-insulator）的MZI热光调制器，调制器的消光比为16.5dB，开关的上升时间为10μs，下降时间为20μs，相应的功耗为0.39W

缀饰激子在半导体微腔中的辐射

建立了半导体微腔的缀饰激子模型。在VCSEL器件量子阱中的激子首先通过内电磁场与腔耦合,形成缀饰态。而后作为多粒子过程,缀饰激子与腔内真空场耦合产生辐射。通过QED方法,得到偶极子辐射密度方程和系统能量衰变方程。

CoSi2超薄外延膜的生长研究

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