A STUDY OF THE COMPOSITION DISTRIBUTION AT THE TI/AL2O3 INTERFACE USING THE MCS(+)-SIMS TECHNIQUE

In this article, the MCs(+)-SIMS technique has been used to characterize Ti/Al2O3 metal/insulator interfaces. Our experiment shows that by detecting MCs(+) secondary ions, the matrix and interface effects are reduced, and good depth profiles have been obtained. The experimental result also shows that with the increase of the annealing temperature (RT, 300 degrees C, 600 degrees C, 850 degrees C), the interface gets broadened gradually, indicating diffusion and reaction take place at the interface, and the interface reaction is enhanced with the increase in annealing temperature. When the temperature increases, the AlCs+ signal forms two plateaus in the Ti layer, indicating Al from the decomposition of Al2O3 diffuses into the Ti layer and exists as two new forms (phases). Also, with the increase of the annealing temperature, oxygen diffuses into the Ti layer gradually, and makes the O signal in the Ti layer increase significantly in the 850 degrees C annealed sample.

Homoepitaxial Growth of 4H-SiC and Ti/4H-SiC SBDs

Homoepitaxial growth of4H-SiC on off-oriented Si-face （0001） 4H-SiC substrates was performed at 1500℃ by using the step controlled Epitaxy. Ti/4H-SiC Schottky barrier diodes （SBDs） with blocking voltage over lkV have been made on an undoped epilayer with 32μm in thick and 2-5 × 10^15 cm^-3 in carrier density. The diode rectification ratio of forward to reverse （defined at ± 1V） is over 107 at room temperature and over 10^2 at 538K. Their electrical characteristics were studied by the current-voltage measurements in the temperature range from 20 to 265 ℃. The ideality factor and Schottky barrier height obtained at room temperature are 1.33 and 0. 905eV, respectively. The SBDs have on-state current density of 150A/cm^2 at a forward voltage drop of about 2.0V. The specific on-resistance for the rectifier is found to be as 7.9mΩ · cm^2 and its variation with temperature is T^2.0.

800nm Semiconductor Absorber with Low Temperature Method and Surface State Method Combined Absorber for Kerr Lens Modelocking of Ti∶Al2O3 Laser

A novel 800nm Bragg mirror type of semiconductor saturable absorption mirror with low temperature method and surface state method combined absorber is presented.With which passive Kerr lens mode locking of Ti∶Al2O3 laser pumped by argon ion laser is realized,which produces pulses as short as 40fs.The spectrum bandwidth is 56nm,which means that it can support the modelocking of 20fs.The pulse frequency is 97.5MHz;average output power is 300mW at the pump power of 4.45W.

高压 Ti/ 6H- SiC肖特基势垒二极管（英文）

在N型6H-SiC外延片上，通过热蒸发，制作Ti/6H-SiC肖特基势垒二极管(SBD)。通过化学气相淀积，进行同质外延生长，详细测量并分析了肖特基二极管的电学特性，该肖特基二极管具有较好的整流特性。反向击穿电压约为400V，室温下，反向电压V_R=200V时，反向漏电流J_R低于1×10~(-4)A/cm~2。采用Ne离子注入形成非晶层，作为边缘终端，二极管的击穿电压增加到约为800V。

Ti-AlN快速退火的界面

国家自然科学基金

Ti/莫来石陶瓷界面反应的俄歇电子能谱研究

结果表明，在淀积过程中，最初淀积的Ti与衬底表面的氧形成Ti-O键，界面区很窄；450℃退火1h后，有少量元素态Al、Si原子析出，界面区有所展宽，但变化不大；650℃退火1h后，界面发生强烈反应，有TiO和Ti-Al、Ti-Si化合物生成。850℃退火1h后，除上述反应产物外又生成了Ti_2O。

Ti薄膜与AlN陶瓷的界面反应

用X射线衍射分析、二次离子质谱、卢瑟福背散射谱、俄歇电子能谱等表面分析技术，研究了Ti膜与AlN陶瓷衬底的界面固相反应。在高真空中用电子束蒸发的方法在抛光的200℃AlN陶瓷衬底上淀积200nm的Ti膜，并在真空恒温炉中退火。实验表明，退火中Ti膜与AlN界面发生了扩散与反应。650℃，1h退火已观测到明显的界面反应。界面反应产物主要是钛铝化物及Ti-N化合物。铝化物是Ti-Al二元化合物和Ti-Al-N三元化合物，850℃,4h退火后则主要由Ti_2AlN组成。

Ti和AlN陶瓷的界面反应

采用电子束蒸发的方法在抛光的200℃AlN陶瓷衬底上淀积厚度为200nm的Ti膜，并在高真空中退火。研究了从200￣850℃温区内Ti与AlN的固相界面反应，给出了界面组分分布随退火温度和时间的变化关系。在界面区发生了三元铝化物并观测到铝化物产生与发展过程。

Ti和蓝宝石的界面反应

在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(a-Al_2O_3)衬底上蒸镀500 nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES和SIMS等表面分析技术详细研究了从室温至850℃,Ti与a-Al_2O_3的固相界面反应.首次系统提出了不同反应温区相应的化学反应式,讨论了采用体材料数据作热力学计算来预言Ti/a-Al_2O_3界面反应的局限性.

Ti Schottky barrier diodes on n-type 6H-SiC

Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes (SBD) were fabricated. They showed good rectification characteristics from room temperature to 200degreesC. At low current density. the current conduction mechanism follows the thermionic emission theory. These diodes demonstrated a low reverse leakage current of below 1 X 10(-4)Acm(-2). Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800V. In addition. these SBDs showed superior switching characteristics.

TI C28X系列MCU电源管理设计TI C28X系列MCU电源管理设计

A brief summary of TI C28X MCU is presented in this paper. The key points of power management design for all C28X MCU based on different requirements on power management are proposed. Two different solutions of power management design with specific examples can help C28X MCU developers with technical advice and have positive impact on application of C28X MCU in the field of industrial control.中文摘要：本文对 TI C28X 系列 MCU 作了简要归纳和介绍 针对各款 MCU 对电源管理的不同要求,提出了全系列 MCU 的电源管理部分设计要点,总结了两类不同的电源管理设计方案,对每类方案均给出了具体的设计案例 为 C28X 系列 MCU 的电源管理设计提供了技术指导,对促进 C28X 系列 MCU 在工业控制领域内的应用有积极的意义.