FORMATION OF SILICIDES IN THE TI, TI(OX)/SI(111), AND TISIO2/SI(111) SYSTEMS


Autoria(s): HSU CC; WANG YX; YIN SD; LI BQ; JI MR; WU JX
Data(s)

1987

Identificador

http://ir.semi.ac.cn/handle/172111/14647

http://www.irgrid.ac.cn/handle/1471x/101358

Idioma(s)

英语

Fonte

HSU CC; WANG YX; YIN SD; LI BQ; JI MR; WU JX.FORMATION OF SILICIDES IN THE TI, TI(OX)/SI(111), AND TISIO2/SI(111) SYSTEMS,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,1987,5(4):1402-1406

Palavras-Chave #半导体材料
Tipo

期刊论文