用于光纤通信的1.55μmDFB激光器的可靠性分析

对用于光纤通信的InP基1.55 μm DFB激光器的可靠性进行了研究.测试并分析了100 ℃时100 mA和150 mA 2种电流应力条件,经过1 700 h老化,测试分析了激光器特性随时间的变化情况,拟合出在100 ℃,150 mA条件下的激光器寿命在1 000 h小时左右.根据实验结果对比,提出了一种新的利用温度、电流两个加速度变量同时进行加速老化,快速估计激光器寿命并分析其可靠性的方法.对新的寿命估算方法进行了详细的讨论.

Narrow-beam divergence 1.55μm laser diodes with integrated self-aligned spotsize conVerter

This paper describes the high performance of narrow-beam divergence spot size converter (SSC) integrated separately confined heterostructure (SCH) LD. The upper optical confinement layer (OCL) and the butt-coupled tapered thickness waveguide were regrown simultaneously, which not only offered the separated optimization of the active region and the integrated spotsize converter, but also reduced the difficulty of the butt-joint selective regrowth. The threshold current was as low as 5.4 mA, the output power at 55 mA was 10.1 mW, the vertical and horizontal far field divergence angles were as low as 9°and 15°, and the 1-dB misalignment tolerances were 3.6 and 3.4μm, respectively.

1.55-μm Si-based MOEMS optical tunable filter

A prototype 1.55-μm Si-based micro-opto-electro-mechanical-systems (MOEMS) tunable filter is fabricated, employing surface micromachining technology. Full-width-at-half-maximum (FWHM) of the transmission spectrum is 23 nm. The tuning range is 30 nm under 50-V applied voltage. The device can be readily integrated with resonant cavity enhanced (RCE) detector and vertical cavity surface emitting laser (VCSEL) to fabricate tunable active devices.

1．55μm Si基光电探测器的研究进展

从材料的生长、器件结构的选择等方面对1．55μm锗光电探测器的研究进展进行了综述，对Ge量子点共振腔增强型光电探测器的应用前景进行了探讨与展望。

1.55μm偏振不灵敏光放大器结构材料的生长

采用张应变量子阱结构，生长了光放大器材料。利用宽接触激光器TE和TM模的输出功率曲线判断并调整量子阱材料的应变量，得到了偏振灵敏度较低的光放大器结构。

Design of Tensile Strained InGaAsP/InGaAsP MQW for 1.55μmpolarization Indepent Semiconductor Optical Amplifier

The theoretical optimization of tensile strained InGaAsP/InGaAsP MQW for 1.5μm window polarization-independent semiconductor optical amplifier is reported. The valence-band structure of the MQw is calculated by using K·P method, in which 6×6 Luttinger effective-mass Hamiltonian is taken into account. LThe polarization dependent optical gain is calculated with various well width, strain, and carrier density.

1.55μm Fabry-Perot Thermo-Optical Tunable Filter with amorphous-Si as Cavity

A 1.55μm Fabry-Perot (F-P) thermo-optical tunable filter is fabricated. The cavity is made of amorphous silicon (a-Si) layer grown by electron-beam evaporation technique. Due to the excellent thermo-optical property of a-Si, the refractive index of the F-P cavity will be changed by heating; the transmittance resonant peak will therefore shift substantially. The measured tuning range is 12nm, FWHM (full-width-at-half-maximum) of the transmission peak is 9nm, and heating efficiency is 0.1K/mW. The large FWHM is mainly due to the non-ideal coating deposition and mirror undulation. Possible improvements to increase the efficiency of heating are suggested.

镜面起伏对1.55 μm Si基MEMS光滤波器的影响

用传输矩阵方法，在简化的光学模型基础上，分别讨论了分布式Bragg反射镜DBR（Distributed Bragg Reflector）的生长精度及镜面起伏对1.55 μm Si基MEMS（Micro-Electro-Mechanical-System）可调谐光滤波器透射谱的影响。计算表明

1.55μm波长发光的自组织InAs量子点生长

通过引入较长停顿时间，采用分子束外延循环生长方法在350℃低温获得了一种横向聚合的InAs自组织量子点，在荧光光谱中观察到1.55μm波长的发光峰。通过AFM和PL谱的联合研究，表明此低温循环生长方法有利于在长波长发光的量子点的形成。

1.55μm InGaAsP-MQW自对准压缩台面高速DBF激光器

采用一种自对准压缩台面结构制作高速1.55μm DFB激光器。激光器的典型阈值为12mA，单面斜率效率达0.157mW/mA，出光功率大于20mW。由于采用窄条p-InP作为电流阻挡层，因此激光器的寄生电容可降至2.5pF，-3DB调制带宽可达9.1GHz。

多层In_(0.55)Al_(0.45)As/A_(0.5)Ga_(0.5)As量子点的变温光致发光研究

测量了自组织多层In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的变温光致发光谱，同时观察到来自浸润层和量子点的发光，首次直接观察了浸润层和量子点之间的载流子热转移。分析发光强度随温度的变化发现浸润发光的热淬灭包括两个过程

不同尺寸分布的自组织In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压光谱

在15K测量了不同尺寸分布的In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点的静压我致发光，静压范围为0--1.3GPa。常压下观察到三个发光峰，分别来源于不同尺寸的量子点(横向直径分别为26、52和62nm)的发光。它产的压力系数分别为82、94和98meV/GPa,都小于In_(0.55)Al_(0.45)As体材料带边的压力系数，特别是尺寸为26nm的小量子点比In_(0.55)Al_(0.45)As体材料带边小17%，并且压力系数随量子点尺寸的变小而减小。理论计算表明有效质量的增在和Γ-X混合是量子点压力系数变小的主要原因，并得到横向直径为26和52nm的小量子点的Γ－X混合势为15和10meV。根据实验还确定In_(0.55)Al_(0.45)As/Al_(0.5)Ga_(0.5)As量子点系统X能带具有Ⅱ类结构，并且估算出价带不连续量为0.15±0.02。

半绝缘InP的优化生长条件以及掩埋的1.55μm激光器

于2010-11-23批量导入

Monolithic Integration of MQW DFB Laser and EA Modulator in 1.55μm

国家863计划

1.55μm InGaAsP/InP DH激光器中的0.95μm发光带与Auger复合

于2010-11-23批量导入