Comparison of tack of pressure-sensitive adhesives (PSAs) at different temperatures

Pressure-sensitive adhesives (PSAs) have applications in the fields of packaging, joining, wound care, and personal care. Depending on the application of the PSA, different performance tests are carried out when new products are developed or the quality of the existing products is checked. Tack is the property of an adhesive that enables it to form instant bond on the surface under light pressure. The tack of a PSA strongly depends on the way the bond is created. Parameters such as the bonded area, contact time and the nature of tack materials all affect the tack force measured. In the development of any PSA, it is desirable to correlate the performance related properties such as tack and peel strength to the rheological behaviour. Finding these correlations would make it possible to evaluate the performance of a PSA using its rheological characteristics. In this investigation we have studied the influence of rheological behaviour of three different PSAs on their tackiness. The three different PSAs used in this study are a low molecular weight rosin ester, high molecular weight rosin ester, and dicyclopentadiene. Various rheological properties such as viscosity, phase angle, and elastic and viscous moduli are measured versus the frequency and temperature. Also the tack properties at various removal speeds and temperatures are evaluated. Analysis of the results indicates different performances of the three PSAs which could be related to their rheological properties, especially the phase angle, at different frequencies and temperatures. The PSA with high molecular weight rosin ester is more sensitive to temperature changes and showed drastic changes in tackiness from high temperature to low temperature. On the other hand, rosin ester with low molecular weight is less sensitive to temperature changes. © 2010 VSP.

A dynamic sampling methodology for plasma etch processes using Gaussian process regression

Plasma etch is a key process in modern semiconductor manufacturing facilities as it offers process simplification and yet greater dimensional tolerances compared to wet chemical etch technology. The main challenge of operating plasma etchers is to maintain a consistent etch rate spatially and temporally for a given wafer and for successive wafers processed in the same etch tool. Etch rate measurements require expensive metrology steps and therefore in general only limited sampling is performed. Furthermore, the results of measurements are not accessible in real-time, limiting the options for run-to-run control. This paper investigates a Virtual Metrology (VM) enabled Dynamic Sampling (DS) methodology as an alternative paradigm for balancing the need to reduce costly metrology with the need to measure more frequently and in a timely fashion to enable wafer-to-wafer control. Using a Gaussian Process Regression (GPR) VM model for etch rate estimation of a plasma etch process, the proposed dynamic sampling methodology is demonstrated and evaluated for a number of different predictive dynamic sampling rules. © 2013 IEEE.