Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers

Autoria(s): Uppal, S.; Gay, D.L.; Armstrong, Alastair; McNeill, David; Baine, Paul; Armstrong, Mervyn; Gamble, Harold; Yallup, K.
Data(s)

01/05/1999
Identificador

http://pure.qub.ac.uk/portal/en/publications/characterisation-of-soi-thin-film-transistors-fabricated-using-sige-etch-stop-layers(a86335f4-f0e6-4471-9a97-f10fdfe77a5a).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Uppal , S , Gay , D L , Armstrong , A , McNeill , D , Baine , P , Armstrong , M , Gamble , H & Yallup , K 1999 , ' Characterisation of SOI thin film transistors fabricated using SiGe etch stop layers ' Paper presented at Proceedings of 195th ECS Meeting and 9th International Symposium on Silicon-on-Insulator Technology & Devices , Seattle , United States , 01/05/1999 - 01/05/1999 , pp. 219-224 .
Tipo

conferenceObject
Acesso ao item digital