BESOI using a silicon germanium etch stop

Autoria(s): Li, X.; Gay, D.L.; McNeill, David; Armstrong, Mervyn; Gamble, Harold
Data(s)

01/09/1997
Identificador

http://pure.qub.ac.uk/portal/en/publications/besoi-using-a-silicon-germanium-etch-stop(7ca04c69-7fec-4cb8-b89d-af87188f48ec).html
Idioma(s)

eng
Direitos

info:eu-repo/semantics/restrictedAccess
Fonte

Li , X , Gay , D L , McNeill , D , Armstrong , M & Gamble , H 1997 , ' BESOI using a silicon germanium etch stop ' Paper presented at Proceedings of 192nd ECS Meeting, Semiconductor Wafer Bonding: Science, Technology & Applications IV , Paris , France , 01/09/1997 - 01/09/1997 , pp. 313-320 .
Tipo

conferenceObject
Acesso ao item digital