Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration


Autoria(s): Armstrong, Mervyn; Baine, Paul; Gamble, Harold; McNeill, David; Suder, Suli
Data(s)

01/10/2006

Identificador

http://pure.qub.ac.uk/portal/en/publications/deposition-and-characterization-of-strained-sige-layer-as-an-etch-stop-layer-in-ultrathin-soi-integration(96b722eb-b257-4df6-9286-3d3b3cec18a8).html

Idioma(s)

eng

Direitos

info:eu-repo/semantics/restrictedAccess

Fonte

Armstrong , M , Baine , P , Gamble , H , McNeill , D & Suder , S 2006 , ' Deposition and Characterization of Strained SiGe Layer as an Etch Stop Layer in Ultrathin SOI Integration ' Paper presented at 210th Electrochem Soc Meeting, Symp on SiGe: & Ge Materials, Processing, & Devices , Cancun , Mexico , 01/10/2006 - 01/10/2006 , pp. 531-537 .

Tipo

conferenceObject