大功率GaInP／AlGaInP半导体激光器

制备了大功率实折射率GaInP／AlGaInP压应变分别限制量子阱激光器．所用外延材料在15°偏角的GaAs衬底上由有机金属气相外延一次外延生长得到．制备的激光器具有双沟脊波导结构，条宽和腔长分别为3和900μm，前后端面分别蒸镀5％的增透膜和95％的高反膜．分析了室温连续激射时激光器的光电输出性能．阈值电流的典型值为32mA，光学灾变阈值为88mW，功率为80mW时的工作电流为110mA，斜率效率为1W／A，串联电阻为3Ω．基横模光输出功率可达60mW，60mW时的平行结和垂直结的远场发散角分别为10°和32°，激射波长为658．4nm．器件的内损耗为4．1cm^-1，内量子效率达80％，透明电流密度为648A／cm^2．

High power AlGaInP laser diodes with zinc-diffused window mirror structure

The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm.

High-Power and High-Efficiency 650nm-Band AlGaInP Visible Laser Diodes Fabricated by Ion Beam Etching

High power and high-slope efficiency 650nm band real-refractive-index ridge waveguide AlGaInP laser diodes with compressive strained MQW active layer are formed by pure Ar ion beam etching process.Symmetric laser mesas with high perpendicularity,which are impossible to obtain by traditional wet etching method due to the use of a 15°-misoriented substrate,are obtained by this dry etching method.Laser diodes with 4μm wide,600μm long and 10%/90% coat are fabricated.The typical threshold current of these devices is 46mA at room temperature,and a stable fundamental-mode operation over 40mW is obtained.Very high slope efficiency of 1.4W/A at 10mW and 1.1W/A at 40mW are realized.

与标准CMOS完全兼容的硅基LED器件模拟

采用工业标准0.6μm CMOS工艺设计了以反向击穿硅p-n结为基础的光发射器件。讨论了该器件的光发射机理。利用商业模拟软件对器件的工作特性进行了模拟，包括器件的正向和反向I-V特性、p区掺杂浓度对击穿电压的影响以及门电压对器件发光强度的调制特性的影响等。结果表明该器件是一种很有前途的硅发光器件，在光互连等领域具有广阔的应用前景。

氮化镓基蓝、绿光LED中游工艺技术产业化研究

氮化镓基蓝、绿光LED在光显示及未来的白光照明领域具有广阔的应用前景，中国科学院半导体研究所和深圳市方大国科光电技术公司利用双方各自的技术优势和资金管理优势，实现了氮化镓基蓝、绿光LED中游工艺技术产业化，目前产品已经批量上市销售。

MOVPE生长的GaN基蓝色与绿色LED

报道用自行研制的LP-MOVPE设备,在蓝宝石(α-Al_2O_3)衬底上生长出以InGaN为有源区的蓝光和绿光InGaN/AlGaN双异质结构以及InGaN/GaN量子阱结构的LED,其发射波长分别为430～450nm和520～540nm。

MOVPE生长InGaN/GaN单量子阱绿光LED

于2010-11-23批量导入

决定AlGaInP高亮度发光二极管光提取效率的主要因素

影响发光二极管光提取效率的主要因素有

高性能实用化GaInP-AlGaInP半导体量子阱可见激光器

用低压MOVPE方法研制出了波长为650nm与670nm的GaInP-AlGaInP半导体量子阱可见光激光器,并已形成一定批量生产能力。批量生产的670nm与650nm半导体量子阱可见光激光器的阈值电流典型值为35mA,额定输出光功率不小于5mW,标称工作温度不低于50℃，预计20℃时寿命接近100000小时，主要技术指标达到目前进口同类产品水平，完全可以满足实验要求。

实用化GaInP-AlGaInP半导体量子阱可见光激光器

用低压MOVPE方法研制出了波长为655nm与670nm的GaInP-AIGaInP半导体量子阱可见光激光器，并已形成一定的批量生产能力。器件的阈值电流典型值为45mA，输出光功率不小于5mW，最高工作温度不低于50℃，预计20℃时寿命接近100000小时，主要技术指标与目前进口的同类产品水平相当，完全可以满足实用要求。

GaN的MOVPE生长和m-i-n型蓝光LED的试制

国家863计划

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

650nm AlGaInP quantum well lasers for the application of DVD

Main application of 650nm band laser diodes are for digital versatile disk (DVD). We demonstrate here the 650nm AlGaInP LD grown by LP-MOCVD with the structure of selected buried ridge waveguide. Excellent performance of LD have been achieved such as threshold current, threshold current density as low as 20mA and 350A/cm(2) respectively at room temperature, the operating temperature up to 90 for the linear power output of 5mw. RIN is about -130db/Hz, The samples of LD have been certified by PUH manufacturers.

Native oxided AlAs current blocking layer for AIGaInP high brightness light emitting diodes

Native Oxide AlAs layer were employed to block the current injection from the tup anode. The luminous intensity exceeded 75 mcd of the LED chip with native oxide AlAs layer sandwiched 5 mu m AlGaAs current spreading layer under 20 mA current injection. Electrical and optical properties the LED chip and plastically sealed lamp were measured. Aging of the LED chip and lamp were performed under 70 degrees C and room temperature, Experiment results shown that there is no apparent effect of the native oxided AlAs layer and the process on the reliability of the LED devices.

High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD

Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C.