High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD
| Data(s) |
1998
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| Resumo |
Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C. Low threshold current and high temperature operation of 650nm AlGaInP quantum well laser diodes grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) are reported in this paper. 650nm laser diodes with threshold current as low as 22-24mA at room temperature, and the operating temperature over 90 degrees C at CW output power 5 mW were achieved in this study. These lasers are stable during 72 hours burn in under 5mW at 90 degrees C. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:37:20Z (GMT). No. of bitstreams: 1 3039.pdf: 315087 bytes, checksum: 93c1f88bd3c70e34d4076ffa95f76a7d (MD5) Previous issue date: 1998 SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE, Taiwan Chapter.; Photon Ind Dev Assoc.; Natl Sci Council, Taiwan. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Ma XY; Cao Q; Wang ST; Guo L; Lian P; Wang LM; Zhang XY; Yang YL; Zhang HQ; Wang GH; Chen LH .High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD .见：SPIE-INT SOC OPTICAL ENGINEERING .OPTOELECTRONIC MATERIALS AND DEVICES, 3419,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,1998,131-136 |
| Palavras-Chave | #光电子学 #AlGaInP #quantum well #laser diode #MOCVD |
| Tipo |
会议论文 |
