High power AlGaInP laser diodes with zinc-diffused window mirror structure
Data(s) |
2004
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Resumo |
The technology of zinc-diffusion to improve catastrophic optical damage (COD) threshold of compressively strained GaInP/AlGaInP quantum well laser diodes has been introduced. After zinc-diffusion, about 20-μm-long region at each facet of laser diode has been formed to serve as the window of the lasing light. As a result, the COD threshold has been significantly improved due to the enlargement of bandgap by the zinc-diffusion induced quantum well intermixing, compared with that of the conventional non-window structure. 40-mW continuous wave output power with the fundamental transverse mode has been realized under room temperature for the 3.5-μm-wide ridge waveguide diode. The operation current is 84 mA and the slope efficiency is 0.74 W/A at 40 mW. The lasing wavelength is 656 nm. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Yun Xu;Qing Cao;Xiaopeng Zhu;Guohua Yang;Qiaoqiang Gan;Guofeng Song;Liang Guo;Yuzhang Li;Lianghui Chen.High power AlGaInP laser diodes with zinc-diffused window mirror structure,Chinese Optics Letters,2004,2(11):647-649 |
Palavras-Chave | #光电子学 |
Tipo |
期刊论文 |