Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure
| Data(s) |
2004
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| Resumo |
Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications. Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications. 于2010-10-29批量导入 Made available in DSpace on 2010-10-29T06:36:19Z (GMT). No. of bitstreams: 1 2773.pdf: 572743 bytes, checksum: 57b5a554fd63555849bb72e57f00209a (MD5) Previous issue date: 2004 SPIE.; Chinese Opt Soc.; Wuhan Municipal Govt. Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China SPIE.; Chinese Opt Soc.; Wuhan Municipal Govt. |
| Identificador | |
| Idioma(s) |
英语 |
| Publicador |
SPIE-INT SOC OPTICAL ENGINEERING 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA |
| Fonte |
Xu Y; Zhu XP; Ye XJ; Kang XN; Cao Q; Guo L; Chen LH .Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure .见：SPIE-INT SOC OPTICAL ENGINEERING .APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280,1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA ,2004,29-37 |
| Palavras-Chave | #光电子学 #finite-difference methods #AlGaInP laser diodes #RISA #OPERATION #LAYER #NM |
| Tipo |
会议论文 |
