1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE

High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.

掺杂和热处理对纳ZnO薄膜气敏特性影响

用真空蒸发法在玻璃和单晶硅片上制备纯Zn和掺杂Zn薄膜，然后在高于450 ℃条件下进行氧化、热处理（玻璃衬底）获得良好的纳米ZnO薄膜和掺杂ZnO薄膜。对单晶硅衬底上制备的纯Zn薄膜在高于800 ℃温度条件下进行液态源掺杂，获得掺B和P纳米ZnO薄膜。实验表明，掺杂和热处理使纳米ZnO薄膜的结构、导电性能得到改善，有效地降低了纳米ZnO薄膜的电阻，同时薄膜的气敏特性也得到较大的改善。

ZnO:Tb纳米晶的协同发光现象

用光致发光的方法研究了掺铽的ZnO纳米晶这种新型掺杂纳米晶体系，观察到了其中的协同发光现象，指出ZnO纳米基质与掺入其中的铽中心之间存在有效的能量传递。该能量传递对稀土铽离子的特征发光起决定性的作用。

GaN蓝光材料新型ZnO/Si外延衬底的溅射沉积

采用常规磁控溅射方法，通过优化工艺，在Si(100),Si(111)多种基片上沉积ZnO薄膜。利用透射电镜(TEM)、X射线衍射(XRD)和X射线摇摆曲线(XRC)，对ZnO薄膜的微区形貌、结晶情况、C轴择优取向进行了详细的测试分析。结果表明，所制备的ZnO薄膜具有理想的结构特性，大多数样品测得ZnO(002)晶面XRC的半高宽(FWHM)1°左右，最小值达0.353°，优于目前国内外同类研究的最佳结果2°。并对ZnO/Si(100)与ZnO/Si(111)衬底的结果进行了比较和讨论。

在p-Si(100)上溅射法生长ZnO的结构和光学特性

室温下在p-Si(100)上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的，XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射，其强度与晶体质量有关。

多种基底上溅射沉积ZnO薄膜的结构

在玻璃基底踌地基底上用反应式直流磁控溅射法制备了ZnO薄膜。用AES和XRD对薄膜结构和组分进行测试，结果表明，五种基底上生长的ZnO薄膜在不同程度上都具有优良的纵向均匀性、明显的c轴择优取和向较高的结晶度，而硅基底上薄膜的结构普遍优于玻璃基底上沉积薄膜。

氧离子束辅助激光淀积生长ZnO/Si的XPS研究

利用X射线光电子能谱深度剖析方法对ZnO/Si异质结构进行了分析。用该法可生长出正化学比的ZnO，不过生长的ZnO薄膜存在孔隙，工艺还有待进一步改进。

ZnO∶Tb纳米晶的制备、结构与发光性质

于2010-11-23批量导入

Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure

Optical modes of AlGaInP laser diodes with real refractive index guided self-aligned (RISA) structure were analyzed theoretically on the basis of two-dimension semivectorial finite-difference methods (SV-FDMs) and the computed simulation results were presented. The eigenvalue and eigenfunction of this two-dimension waveguide were obtained and the dependence of the confinement factor and beam divergence angles in the direction of parallel and perpendicular to the pn junction on the structure parameters such as the number of quantum wells, the Al composition of the cladding layers, the ridge width, the waveguide thickness and the residual thickness of the upper P-cladding layer were investigated. The results can provide optimized structure parameters and help us design and fabricate high performance AlGaInP laser diodes with a low beam aspect ratio required for optical storage applications.

Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer

Polycrystalline GaN thin films have been deposited epitaxially on a ZnO-buffered (111)-oriented Si substrate by molecular beam epitaxy. The microstructural and compositional characteristics of the films were studied by analytical transmission electron microscopy (TEM). A SiO2 amorphous layer about 3.5 nm in thickness between the Si/ZnO interface has been identified by means of spatially resolved electron energy loss spectroscopy. Cross-sectional and plan-view TEM investigations reveal (GaN/ZnO/SiO2/Si) layers exhibiting definite a crystallographic relationship: [111](Si)//[111](ZnO)//[0001](GaN) along the epitaxy direction. GaN films are polycrystalline with nanoscale grains (similar to100 nm in size) grown along [0001] direction with about 20degrees between the (1 (1) over bar 00) planes of adjacent grains. A three-dimensional growth mode for the buffer layer and the film is proposed to explain the formation of the as-grown polycrystalline GaN films and the functionality of the buffer layer. (C) 2004 Elsevier Ltd. All rights reserved.

The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy

This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions.