The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy
| Data(s) |
2010
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| Resumo |
This work was supported by the 863 High Technology R&D Program of China (Grant Nos. 2007AA03Z402 and 2007AA03Z451), the Special Funds for Major State Basic Research Project (973 program) of China (Grant No. 2006CB604907), and the National Science Foundation of China (Grant Nos. 60506002 and 60776015). The authors express their appreciation to Dr. Tieying Yang and Prof. Huanhua Wang (Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences) for XRD measurements and helpful discussions. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Song HP (Song H. P.), Zheng GL (Zheng G. L.), Yang AL (Yang A. L.), Guo Y (Guo Y.), Wei HY (Wei H. Y.), Li CM (Li C. M.), Yang SY (Yang S. Y.), Liu XL (Liu X. L.), Zhu QS (Zhu Q. S.), Wang ZG (Wang Z. G.).The growth of ZnO on bcc-In2O3 buffer layers and the valence band offset determined by X-ray photoemission spectroscopy.SOLID STATE COMMUNICATIONS,2010,150(41-42):1991-1994 |
| Palavras-Chave | #半导体材料 #ZnO #In2O3 #MOCVD #Photoelectron spectroscopies #IN2O3-ZNO FILMS #TRANSPARENT #OXIDE #SEMICONDUCTORS #INN |
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期刊论文 |
