1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE


Autoria(s): Qiu Weibin; Dong Jie; Wang Wei; Zhou Fan
Data(s)

2002

Resumo

High performance 1.57μm spotsize converter monolithically integrated DFB is fabricated by the technique of self-aligned selective area growth. The upper optical confinement layer and the butt-coupled tapered thickness waveguide are regrown simultaneously, which not only offeres the separated optimization of the active region and the integrated spotsize converter, but also reduces the difficulty of the butt-joint selective regrowth. The threshold current is as low as 4.4mA. The output power at 49mA is 10.1mW. The side mode suppression ratio (SMSR) is 33.2dB. The vertical and horizontal far field divergence angles are as small as 9° and 15° respectively, the 1dB misalignment tolerance are 3.6μm and 3.4μm.

Identificador

http://ir.semi.ac.cn/handle/172111/18079

http://www.irgrid.ac.cn/handle/1471x/103677

Idioma(s)

英语

Fonte

Qiu Weibin;Dong Jie;Wang Wei;Zhou Fan.1.5μm Self-Aligned Spotsize Converter Integrated DFB Fabricated by Selective Area Grown MOVPE,半导体学报,2002,23(7):681-684

Palavras-Chave #半导体材料
Tipo

期刊论文