1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

In this paper, we report a novel 1.3-μm uncooled AlGaInAs/InP multiple quantum well (MQW) ridge waveguide laser diodes. By optimizing the design of MQW structure and facet coatings, together with the application of reversed-mesa ridge waveguide (RM-RWG) structure, polyimide planarization, and lift-off processes technology, an uncooled 1.3-μm, 10-Gb/s directly modulated MQW ridge waveguide laser diode was successfully fabricated. The threshold current and the slope efficiency were 7 mA and 0.48 mW/mA, respectively. The directly modulated bandwidths of 11 and 9.2 GHz were achieved at room temperature and 80 Celsius degrees, respectively.

基于硫化物表面处理的InP/GaAs低温晶片键合

提出一种新的基于硫化物表面处理的InP/GaAs低温晶片键合技术.在360℃的退火温度下,获得了1.2MPa的键合强度.基于这种低温键合技术,可将外延生长在InP衬底上的In0.53Ga0.47As/InP多量子阱(MQW)键合并转移到GaAs衬底上.X射线衍射表明量子阱的结构未受键合过程的影响.光致发光谱分析表明键合后量子阱的晶体质量略有改善.电流电压特性的测试表明n-InP/n-InP的键合界面具有良好的导电特性;在n-InP/n-GaAs 的键合界面存在着电荷势垒,这主要是由于键合界面存在GaAs氧化物薄层所致.

MBE Growth of High Electron Mobility InP Epilayers

The molecular beam epitaxial growth of high quality epilayers on （100） InP substrate using a valve phosphorous cracker cell over a wide range of P/In BEP ratio （2.0-7.0） and growth rate （0.437 and 0. 791μm/h）. Experimental results show that electrical properties exhibit a pronounced dependence on growth parameters,which are growth rate, P/In BEP ratio, cracker zone temperature, and growth temperature. The parameters have been optimized carefully via the results of Hall measurements. For a typical sample, 77K electron mobility of 4.57 × 10^4 cm^2/（V · s） and electron concentration of 1.55×10^15 cm^-3 have been achieved with an epilayer thickness of 2.35μm at a growth temperature of 370℃ by using a cracking zone temperature of 850℃.

InP基长波长光发射OEIC材料的MOCVD生长

为了生长制作器件所需的外延片,采用低压金属有机物化学气相沉积方法在半绝缘InP衬底上生长了InP/InGaAs异质结双极晶体管(HBT)结构、1.55μm多量子阱激光二极管以及两者集成的光发射光电集成电路材料结构.激光器结构的生长温度为655℃,有源区为5个周期的InGaAsP/ InGaAsP多量子阱(阱区λ＝1.6μm,垒区λ＝1.28μm);HBT结构则采用550℃低温生长,其中基区采用Zn掺杂,掺杂浓度约为2×1019cm-3.对生长的各种结构分别进行了X射线双晶衍射,光致发光谱和二次离子质谱仪的测试,结果表明所生长的材料结构已满足制作器件的要求.

InP基多周期InAs/InAlGaAs量子点阵列的结构和光学性质

在InP(001)衬底上使用分子束外延技术自组织生长了多周期InAs/InAlGaAs量子点阵列结构.根据对透射电镜和光致发光谱结果的分析,认为引入与InP衬底晶格匹配的InAlGaAs缓冲层可以获得较大的InAs量子点结构,而InAlGaAs层的表面特性对InAs量子点的结构及光学性质有很大影响.对InP基InAlGaAs缓冲层上自组织量子点的形核和演化机制进行了探讨,提出量子点的演化过程表现为量子点的合并长大并伴随着自身的徙动,以获得能量最优的分布状态.

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-III trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.

1.78 μm Strained InGaAs-InGaAsP-InP Distributed Feedback Quantum Well Lasers

Ridge-waveguide distributed-feedback(DFB) lasers with highly strained InGaAs/InGaAsP active regions,emitting at 1.78 μm were fabricated by low pressure metal-organic vapor phase epitaxy(LP-MOVPE) and tested.The lasers exhibited threshold current of 33 mA for 900 μm long cavities at room temperature.A maximum light output power of 8 mW from one facet and an external differential quantum efficiency of 7% were also obtained.In oddition,the side mode suppression ratio (SMSR) is 27.5 dB.

高增益偏振不灵敏InGaAs/InP体材料半导体光放大器

采用三元InGaAs体材料为有源区,通过直接在InGaAs体材料中引入0.20%张应变来加强TM模的增益,研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA).在低压金属有机化学气相外延(LP-MOVPE)的过程中,只需调节三甲基Ga的源流量便可获得所要求的张应变量.制作的半导体光放大器在200 mA的注入电流下,获得了50nm宽的3 dB光带宽和小于0.5dB的增益抖动;重要的是,半导体光放大器能在较大的电流和波长范围里实现小于1.1dB的偏振灵敏度.对于1.55μm波长的信号光,在200 mA的偏置下,其偏振灵敏度小于1 dB,同时获得了大于14dB光纤到光纤的增益,3 dBm的饱和输出功率和大于30 dB的芯片增益.用作波长变换器,可获得较高的波长变换效率.进一步提高半导体光放大器与光纤的耦合效率,可得到性能更佳的半导体光放大器.

（111）A InP衬底上MOCVD外延InGaAsP的表面形貌和光学特性

为了研究(111)衬底的特性以及实现等边三角形微腔激光器，利用金属有机化学气相淀积(MOCVD)研究了(111)A InP衬底上InGaAsP外延层的表面形貌和光学特性。考虑到(111)A InP衬底的悬挂键密度比较低，在生长过程中有意提高了V／III比。通过扫描电子显微镜(SEM)和光荧光(PL)谱分别研究了外延层的表面形貌和光学特性。实验发现，表面形貌和光学特性随V／III比和温度的变化非常大。最佳V／IlI比和温度分别为400和625℃。

基于InP／空气隙布拉格反射镜的长波长谐振腔光电探测器

报道了一种长波长的InP基谐振腔(RCE)光电探测器．采用选择性湿法刻蚀，制备出基于InP／空气隙的分布布拉格反射镜，并将该结构的反射镜引人RCE光电探测器．制备的器件在波长1.510μm处获得了约59％的峰值量子效率，以及8GHz的3dB响应带宽，其中器件的台面面积为50μm * 50μm．

InP(001)基衬底上自组织生长InAs量子点（线）的光学性质研究

在InP(001)基衬底上用分子束外延方法生长InAs纳米结构材料,通过衬底的旋转与否及混合生长模式,得到了两种InAs量子点和量子线，并研究了量子点、线的光学性质。结果表明，两种方式都可生长出较强发光的量子点(线)；由量子点排列构成的量子线的光致发光光谱呈现出多峰结构，分析和理论计算表明这是InAs量子线上各量子点在垂直方向上不同高度分布和非连续性而造成的。

10*10nGaAsP/InP阵列波导光栅器件的研制

研制了脊形波导结构的10*10InGaAsP/InP阵列波导光栅器件（AWG），并采用掺饵光纤放大器（EDFA）作宽带光源测量了AWG的近场图以及分光特性。

光电子材料InP玷污的研究

文章给出了光电子材料InP的（100）和（111）晶面质谱分析的结果，对（100）晶面做了光荧光分析。在300和77 K温度下测量了（100）晶面的电子浓度及电子迁移率。研究表明玷污主要来自硅。

窄条宽化学气相沉积选区生长InP系材料波长调制的研究

采用窄条宽选区生长化学气相沉积（NSAG-MOCVD）技术在掩膜宽度0～40 μm范围内，获得波长漂移达177.5 nm的高质量的InGaAsP材料，经推导，获得各个生长区域的组份、应变和In，Ga的气相浓度增加因子的比值随掩膜条宽的变化关系，并且认为该比值在阈值掩膜宽度范围内，与III族分压比相关，大于阈值掩膜宽度范围内，与III族源无关，此外，对材料富In现象作了合理解释。

Influence of Fe Doping Concentration on Some Properties of Semi-Insulating InP

Properties of Fe-doped semi-insulating (SI) InP with different iron concentrations are studied by using Hall effect, current-voltage (I-V), photoluminescence spectroscopy (PL) and photocurrent spectroscopy (PC) measurements. I-V characteristics of SI InP strongly depend on Fe doping concentration. Fe doping concentration also influences optical properties and defective formation in as-grown SI InP. Band-gap narrowing phenomenon and defects in Fe doped SI InP are studied using PI and PC.